ISSI IS25WJ032F-JBLE-TR

The IS25WJ032F Serial Flash memory offers a versatile storage solution with high flexibility and performance in a simplified pin count package. The device is accessed through a 4-wire SPI Interface consisting of a Serial Data Input (SI), Serial Data Output (SO), Serial Clock (SCK), and Chip Enable (CE#) pins, which can also be configured to serve as multi-I/O. The device supports Dual and Quad I/O as well as standard, Dual Output, and Quad Output SPI. Clock frequencies of up to 133MHz allow for equivalent clock rates of up to 532MHz (133MHz x 4) which equates to 66Mbytes/s of data throughput. The IS25WJxxxF series of Flash adds support for DTR (Double Transfer Rate) commands that transfer addresses and read data on both edges of the clock. These transfer rates can outperform 16-bit Parallel Flash memories allowing for efficient memory access to support XIP (execute in place) operation. The memory array is organized into programmable pages of 256-bytes. This family supports page program mode where 1 to 256 bytes of data are programmed in a single command. QPI (Quad Peripheral Interface) supports 2-cycle command further reducing command times. Pages can be erased in groups of 4Kbyte sectors, 32Kbyte blocks, 64Kbyte blocks, and/or the entire chip. The uniform sector and block architecture allows for a high degree of flexibility so that the device can be utilized for a broad variety of applications requiring solid data retention.

• Industry Standard Serial Interface
  • IS25WJ032F: 32Mbit/4Mbyte - 256 bytes per Programmable Page - Supports standard SPI, Fast, Dual, Dual I/O, Quad, Quad I/O, SPI DTR, Dual I/O DTR, Quad I/O DTR, and QPI
  • Supports Serial Flash Discoverable Parameters (SFDP)
• High Performance Serial Flash (SPI)
  • 66MHz Normal and 133Mhz Fast Read
  • 532 MHz equivalent QPI
  • DTR (Dual Transfer Rate) up to 80MHz
  • Selectable Dummy cycles
  • Configurable Drive Strength
  • Supports SPI Modes 0 and 3
  • More than 100,000 Erase/Program Cycles
  • More than 20-year Data Retention
• Flexible & Efficient Memory Architecture
  • Chip Erase with Uniform: Sector/Block Erase (4/32/64 Kbyte)
  • Program 1 to 256 Bytes per Page
  • Program/Erase Suspend & Resume
• Efficient Read and Program modes
  • Low Command Overhead Operations
  • Continuous Read 8/16/32/64-Byte Burst Wrap
  • Selectable Burst Length
  • QPI for Reduced Command Overhead
• Low Power with Wide Temp. Ranges
  • Single 1.65V to 2.0V Voltage Supply
  • 10 μA Standby Current (typ.)
  • 0.1 μA Deep Power Down (typ.)
  • Temp Grades: Extended: -40℃ to +105℃ Auto Grade (A2): -40℃ to +105℃
• Advanced Security Protection
  • Software and Hardware Write Protection
  • Power Supply Lock Protect
  • 3x1024-Byte Dedicated Security Area with OTP User-lockable Bits
  • 128 bit Unique ID for Each Device (Call Factory)
• Industry Standard Pin-out & Packages
  • Y = 8 -contact USON 2x3mm
  • T = 8 -contact USON 4x3mm
  • B = 8 -pin SOIC 208mil
  • N = 8 -pin SOIC 150mil
  • KGD (Call Factory)