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Infineon IRFB7530PBF
| Fabricant | |
| Réf. Fab. | IRFB7530PBF |
| Réf. LCSC | C537869 |
| Condit. | TO-220AB |
| Numéro Client | |
| Caract. clés | MOSFET N-CH 60V 295A TO-220AB |
| Fiche Technique | Infineon IRFB7530PBF |
| Conformité RoHS | 1 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | TO-220AB | |
| Output Capacitance(Coss) | 1.266nF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 295A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 806pF | |
| RDS(on) | 1.65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.703nF | |
| Gate Charge(Qg) | 411nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | TO-220AB | |
| Output Capacitance(Coss) | 1.266nF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 295A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 806pF | |
| RDS(on) | 1.65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.703nF | |
| Gate Charge(Qg) | 411nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Lead-Free, RoHS Compliant
Applications
Traduction par IA
- Brushed Motor drive applications
- BLDC Motor drive applications
- Battery powered circuits
- Half-bridge and full-bridge topologies
- Synchronous rectifier applications
- Resonant mode power supplies
- OR-ing and redundant power switches
- DC/DC and AC/DC converters
- DC/AC Inverters
En stock: 41
41 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 4.2593 | $ 4.26 |
| 10+ | $ 3.6071 | $ 36.07 |
| 50+ | $ 3.217 | $ 160.85 |
| 100+ | $ 2.8254 | $ 282.54 |
| 500+ | $ 2.6434 | $ 1321.70 |
| 1,000+ | $ 2.5615 | $ 2561.50 |
Boîtier Standard50/Full Tube | ||
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Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | TO-220AB | |
| Output Capacitance(Coss) | 1.266nF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 295A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 806pF | |
| RDS(on) | 1.65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.703nF | |
| Gate Charge(Qg) | 411nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | TO-220AB | |
| Output Capacitance(Coss) | 1.266nF | |
| Pd - Power Dissipation | 375W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 295A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 806pF | |
| RDS(on) | 1.65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 13.703nF | |
| Gate Charge(Qg) | 411nC | |
| Vgs | ±20V | |
| Type | N-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche SOA
- Enhanced body diode dV/dt and dI/dt Capability
- Lead-Free, RoHS Compliant
Applications
Traduction par IA
- Brushed Motor drive applications
- BLDC Motor drive applications
- Battery powered circuits
- Half-bridge and full-bridge topologies
- Synchronous rectifier applications
- Resonant mode power supplies
- OR-ing and redundant power switches
- DC/DC and AC/DC converters
- DC/AC Inverters
C537869 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| IRL60B216 | Infineon | TO-220AB | 15 | $ 7.1614 | ||
| PSMN2R0-60PSRQ-VB | VBsemi Elec | TO-220AB | 10 | $ 2.101 | ||
| PSMN2R6-60PS127-VB | VBsemi Elec | TO-220AB | 5 | $1.6896 $1.7785 | ||
| PSMN2R5-60PL127-VB | VBsemi Elec | TO-220AB | 5 | $1.6896 $1.7785 | ||
| PSMN2R0-60PSR,127-VB | VBsemi Elec | TO-220AB | 5 | $1.6896 $1.7785 | ||
| PSMN2R6-60PSQ127-VB | VBsemi Elec | TO-220AB | 5 | $1.6896 $1.7785 | ||
| PSMN2R6-60PSQ-VB | VBsemi Elec | TO-220AB | 5 | $1.6896 $1.7785 | ||
| PSMN2R5-60PLQ-VB | VBsemi Elec | TO-220AB | 3 | $1.9818 $2.0861 | ||
| PSMN2R0-60PS,127-VB | VBsemi Elec | TO-220AB | 3 | $1.6896 $1.7785 | ||
| VBM1602 | VBsemi Elec | TO-220AB | 0 | $ 2.2243 |