Infineon BGS 12S3N6 E6327

The BGS12S3N6 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 2 ports can be used as termination of the diversity antenna handling up to 30 dBm. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. The 0.1 dB compression point exceeds the switch’s maximum input power level, resulting in linear performance at all signal levels. The RF switch has a very low insertion loss of 0.25 dB in the 1 GHz and 0.29 dB in the 2.5 GHz range. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required i

• 2 high-linearity TRx paths with power handling capability of up to 30 dBm
• High switching speed, ideal for WLAN and Bluetooth applications
• All ports fully bi-directional
• Low insertion loss
• Low harmonic generation
• High port-to-port-isolation
• 0.05 to 6 GHz coverage
• High ESD robustness
• On-chip control logic
• Very small leadless and halogen free package TSNP-6-6 (0.65×0.98 mm²) with super low height of 0.375 mm
• No decoupling capacitors required if no DC applied on RF lines
• RoHS compliant package

• WLAN
• Bluetooth