Samwin SWH040R03VLT
| Manufacturer | SamwinAsian Brands |
| MPN | SWH040R03VLT |
| LCSC Part # | C5151861 |
| Packaging | DFN(3x3) |
| Customer # | |
| Key Attributes | MOSFET 30V 65A DFN(3x3) |
| Datasheet | Samwin SWH040R03VLT |
| RoHS Compliance | 5 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | DFN(3x3) | |
| Output Capacitance(Coss) | 335pF | |
| Ciss-Input Capacitance | 2.792nF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 322pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 59nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | DFN(3x3) | |
| Output Capacitance(Coss) | 335pF | |
| Ciss-Input Capacitance | 2.792nF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 322pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 59nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This power MOSFET is manufactured using advanced technology. This technology enables the power MOSFET to deliver superior characteristics, including fast switching times, low on-resistance, low gate charge, and particularly excellent avalanche characteristics.
Features
AI Translation
- High ruggedness DFN3*3 MOSFET
- RDS(ON) @VGS = 4.5V (Typ 4.0mΩ)
- Improved dv/dt Capability
- This power MOSFET is produced with advanced technology, enabling it to have better characteristics, including fast switching time, low on resistance, low gate charge and excellent avalanche characteristics
Applications
AI Translation
- Synchronous Rectification - Li-ion Battery Protection Board - Inverter
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | DFN(3x3) | |
| Output Capacitance(Coss) | 335pF | |
| Ciss-Input Capacitance | 2.792nF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 322pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 59nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Samwin | |
| Packaging | DFN(3x3) | |
| Output Capacitance(Coss) | 335pF | |
| Ciss-Input Capacitance | 2.792nF | |
| Pd - Power Dissipation | 33.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 65A | |
| Reverse Transfer Capacitance (Crss) | 322pF | |
| RDS(on) | 4mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 59nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This power MOSFET is manufactured using advanced technology. This technology enables the power MOSFET to deliver superior characteristics, including fast switching times, low on-resistance, low gate charge, and particularly excellent avalanche characteristics.
Features
AI Translation
- High ruggedness DFN3*3 MOSFET
- RDS(ON) @VGS = 4.5V (Typ 4.0mΩ)
- Improved dv/dt Capability
- This power MOSFET is produced with advanced technology, enabling it to have better characteristics, including fast switching time, low on resistance, low gate charge and excellent avalanche characteristics
Applications
AI Translation
- Synchronous Rectification - Li-ion Battery Protection Board - Inverter
C5151861 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



