LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
AGMSEMI AGM3015H-W1 product image
  • AGM3015H-W1 thumbnail 1
  • AGM3015H-W1 thumbnail 2
  • AGM3015H-W1 thumbnail 3
  • Pinout
  • Footprint
Images for reference only

AGMSEMI AGM3015H-W1

Manufacturer
AGMSEMIAsian Brands
MPN
AGM3015H-W1
LCSC Part #
C42411660
Packaging
TO-263
Customer #
Key Attributes
MOSFET 30V 240A TO-263
DatasheetAGMSEMI AGM3015H-W1
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerAGMSEMI
PackagingTO-263
Drain to Source Voltage30V
Operating Temperature-55℃~+175℃
Current - Continuous Drain(Id)240A
Output Capacitance(Coss)825pF
Ciss-Input Capacitance6.201nF
Pd - Power Dissipation268W
Reverse Transfer Capacitance (Crss)476pF
RDS(on)1.6mΩ@10V
Number1 N-channel
Gate Charge(Qg)231nC@10V
Gate Threshold Voltage (Vgs(th))2.2V
Help & FeedbackShow similar products (0) >

Introduction

AI Translation

AGM3015H-W1 combines advanced trench MOSFET technology with a low-resistance package to deliver ultra-low RDS(ON). This device is ideal for load switch and battery protection applications.

Features

AI Translation
  • Advanced high cell density trench technology
  • Low RDS(ON) to minimize conduction losses
  • Low gate charge for fast switching
  • Low thermal resistance
  • 100% avalanche tested
  • 100% DVDS tested

Applications

AI Translation
  • MB/VGA Vcore
  • Secondary-side synchronous rectifier for switching power supplies
  • Point-of-load applications
  • Brushless DC motor driver