Infineon AIMCQ120R080M1TXTMA1

Pin Definition:

• Pin 1 - Gate
• Pin 2 - Drive Source
• Pin 3...11 - Power Source
• Pin 12...22, Pad - Drain

Note: Drive Source and Power Source pins are not interchangeable; swapping them may cause malfunction

• Drain-source breakdown voltage V_DSS = 1200V at junction temperature Tvj = -55...175°C
• DC drain current I_DDC = 34A at case temperature Tc = 25°C
• On-state resistance R_DS(on) = 80mΩ at gate-source voltage V_GS = 20V, junction temperature Tvj = 25°C
• New performance-optimized chip technology (Gen1p) with improved R_DS(on)*A
• Best-in-class switching energy for reduced switching losses and lower thermal management requirements
• Lowest device capacitance for higher switching speeds and greater power density
• Low C_rss/C_iss ratio combined with high V_GS(th) to prevent parasitic turn-on and support unipolar gate drive
• Reduced total gate charge Q_G for lower drive power and losses
• Increased recommended turn-on voltage (V_GS(on) = 20V) for reduced R_DS(on)
• .XT chip connection technology with best-in-class thermal performance
• Low package stray inductance for faster, cleaner switching
• Drive (Kelvin) source pin for improved gate control and reduced switching losses
• Creepage distance > 4.75mm, suitable for IEC60664-based material group I, pollution degree 2, V_rms(max) > 950V
• SMT package for automated assembly and reduced system cost
• Low thermal resistance R_th top-side cooled package with optimized thermal performance and power density

• On-board charger
• DC/DC converter
• Auxiliary driver