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onsemi SSR4N60BTF product image
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onsemi SSR4N60BTF

Manufacturer
onsemi
MPN
SSR4N60BTF
LCSC Part #
C3290976
Packaging
TO-252-3(DPAK)
Customer #
Key Attributes
49W 600V 2.8A 2.5Ω@10V 1 N-channel N-Channel TO-252-3(DPAK) Single FETs, MOSFETs RoHS
Datasheetonsemi SSR4N60BTF
RoHS Compliance3 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-252-3(DPAK)
Output Capacitance(Coss)85pF
Ciss-Input Capacitance920pF
Pd - Power Dissipation49W
Configuration-
Drain to Source Voltage600V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)2.8A
Reverse Transfer Capacitance (Crss)19pF
RDS(on)2.5Ω@10V
Number1 N-channel
Gate Charge(Qg)29nC@10V
Vgs±30V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

These N-channel enhancement-mode power MOSFETs are manufactured using a proprietary planar DMOS technology. This advanced technology has been specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies.

Features

AI Translation
  • 2.8A, 600V, R DS(on) = 2.5Ω at V GS = 10V
  • Low gate charge (typical 22nC)
  • Low C rss (typical 14pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

Applications

AI Translation
  • Engine management systems - Body control electronics - DC-DC converters