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EDA ModelsEasyEDA
onsemi SSI4N60BTU
| Manufacturer | |
| MPN | SSI4N60BTU |
| LCSC Part # | C3288482 |
| Packaging | I2PAK(TO-262) |
| Customer # | |
| Key Attributes | 600V 4A 4V 100W 2.5Ω@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs RoHS |
| Datasheet | onsemi SSI4N60BTU |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | I2PAK(TO-262) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 29nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | I2PAK(TO-262) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 29nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
These N-channel enhancement-mode power MOSFETs are manufactured using a proprietary planar DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies.
Features
AI Translation
- 4.0A, 600V, R DS(on) = 2.5Ω at V GS = 10V
- Low gate charge (typical 22nC)
- Low C rss (typical 14pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- mMIMO (Massive Multiple-Input Multiple-Output)
- Small cells
- Macro base stations
- 4G, 5G, and future mobile networks
- 4G and 5G mMIMO power amplifiers (PA)
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | I2PAK(TO-262) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 29nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | I2PAK(TO-262) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 85pF | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 100W | |
| Reverse Transfer Capacitance (Crss@Vds) | 19pF | |
| RDS(on) | 2.5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 920pF | |
| Gate Charge(Qg) | 29nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel enhancement-mode power MOSFETs are manufactured using a proprietary planar DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency switch-mode power supplies.
Features
AI Translation
- 4.0A, 600V, R DS(on) = 2.5Ω at V GS = 10V
- Low gate charge (typical 22nC)
- Low C rss (typical 14pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- mMIMO (Massive Multiple-Input Multiple-Output)
- Small cells
- Macro base stations
- 4G, 5G, and future mobile networks
- 4G and 5G mMIMO power amplifiers (PA)
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| IRFBC20LPBF-VB | VBsemi Elec | Similar | TO-262 | 10 | $0.5089 $0.5986 | ||
| JCS7HN65BC-262 | Jilin Sino-Microelectronics | Similar | TO-262-3 | 3 | $ 0.421 | ||
| OSPH5N65C | OSEN | Similar | TO-262F | 40 | $ 0.1862 | ||
| OSPH16N65 | OSEN | Similar | TO-262F | 48 | $ 0.53 | ||
| STI6N80K5 | ST | Similar | TO-262(I2PAK) | 7 | $ 1.2803 |
5 more alternative parts.View all substitutes