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Modelos EDAEasyEDA
ST STWA72N60DM2AG
| Fabricante | |
| N.º de pieza fab. | STWA72N60DM2AG |
| Nº LCSC | C3281007 |
| Emb. | TO-247 |
| Número de Cliente | |
| Atrib. clave | Automotive-grade N-channel 600 V, 37 mΩ typ., 66 A, MDmesh™ DM2 Power MOSFET |
| Hoja de Datos |  ST STWA72N60DM2AG |
| Conformidad con RoHS | 3 documentos disponibles |
| Componentes alternativos | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 241pF | |
| Current - Continuous Drain(Id) | 66A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 446W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.508nF | |
| Gate Charge(Qg) | 121nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 241pF | |
| Current - Continuous Drain(Id) | 66A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 446W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.508nF | |
| Gate Charge(Qg) | 121nC@10V | |
| Type | N-Channel |
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Descripción
Traducción por IA
This high-voltage N-channel power MOSFET belongs to the MDmesh™ DM2 fast recovery diode series. It features extremely low recovery charge (Qrr) and recovery time (trr), combined with low on-state resistance (RDS(on)), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Características
Traducción por IA
- AEC-Q101 qualified
- Fast recovery body diode
- Ultra-low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener protected
Aplicaciones
Traducción por IA
- Switching applications
Agotado
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Añadir a la Lista BOM
| Cant. | Prec. unit.(Solo como referencia) | Importo total |
|---|---|---|
| 1+ | $ 1.4151 | $ 1.42 |
| 200+ | $ 0.549 | $ 109.80 |
| 500+ | $ 0.5297 | $ 264.85 |
| 1,000+ | $ 0.52 | $ 520.00 |
Encapsulado Estándar30/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 241pF | |
| Current - Continuous Drain(Id) | 66A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 446W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.508nF | |
| Gate Charge(Qg) | 121nC@10V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | ST | |
| Emb. | TO-247 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Output Capacitance(Coss) | 241pF | |
| Current - Continuous Drain(Id) | 66A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 446W | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.8pF | |
| RDS(on) | 42mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.508nF | |
| Gate Charge(Qg) | 121nC@10V | |
| Type | N-Channel |
Reportar un errorMostrar productos similares (0) >
Descripción
Traducción por IA
This high-voltage N-channel power MOSFET belongs to the MDmesh™ DM2 fast recovery diode series. It features extremely low recovery charge (Qrr) and recovery time (trr), combined with low on-state resistance (RDS(on)), making it suitable for demanding high-efficiency converters and ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Características
Traducción por IA
- AEC-Q101 qualified
- Fast recovery body diode
- Ultra-low gate charge and input capacitance
- Low on-resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener protected
Aplicaciones
Traducción por IA
- Switching applications
C3281007 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Componentes alternativos
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| STW70N60DM2 | ST | TO-247 | 39,266 | $ 4.5657 | ||
| STW72N60DM2AG | ST | TO-247 | 4 | $ 15.2846 | ||
| STW70N65DM6 | ST | TO-247 | 6 | $ 27.5216 | ||
| STWA70N65DM6 | ST | TO-247 | 3 | $ 41.9949 | ||
| STWA75N65DM6 | ST | TO-247 | 1 | $ 19.3094 | ||
| STW75N60DM6 | ST | TO-247 | 10 | $ 23.4028 | ||
| STWA75N60M6 | ST | TO-247 | 1 | $ 13.5815 | ||
| RSF60T037W | REASUNOS | TO-247-3 | 33 | $2.8974 $3.0498 | ||
| STW70N60M2 | ST | TO-247 | 205 | $ 3.839 | ||
| STW75N60M6 | ST | TO-247-3 | 0 | $ 18.5727 |