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Infineon IRFU5410PBF
| Manufacturer | |
| MPN | IRFU5410PBF |
| LCSC Part # | C3032 |
| Packaging | TO-251(IPAK) |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 13A TO-251(IPAK) |
| Datasheet | Infineon IRFU5410PBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 58nC | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 58nC | |
| Type | P-Channel |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
- Ultra Low On-Resistance
- P-Channel
- Surface Mount (IRFR5410)
- Straight Lead (IRFU5410)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.5901 | $ 0.59 |
| 10+ | $ 0.4754 | $ 4.75 |
| 30+ | $ 0.4164 | $ 12.49 |
| 75+ | $ 0.359 | $ 26.93 |
| 525+ | $ 0.3262 | $ 171.26 |
| 975+ | $ 0.3082 | $ 300.50 |
Standard Packaging75/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 58nC | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-251(IPAK) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 260pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 66W | |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 760pF | |
| Gate Charge(Qg) | 58nC | |
| Type | P-Channel |
Introduction
Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Features
- Ultra Low On-Resistance
- P-Channel
- Surface Mount (IRFR5410)
- Straight Lead (IRFU5410)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated
- Lead-Free
C3032 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| CMU5950A | Cmos | TO-251 | 4 | $0.3881 $0.4085 | ||
| CMU5941 | Cmos | TO-251 | 5 | $0.2617 $0.2754 | ||
| 18P10AGJ-HF-VB | VBsemi Elec | TO-251 | 100 | $ 0.7258 | ||
| IRFU5410PBF-VB | VBsemi Elec | TO-251 | 25 | $0.6524 $0.6867 | ||
| VBF2152M | VBsemi Elec | TO-251 | 10 | $1.2916 $1.5195 | ||
| FQU8P10-VB | VBsemi Elec | TO-251 | 10 | $0.3963 $0.4662 | ||
| IRFU9120NPBF-VB | VBsemi Elec | TO-251 | 16 | $0.5242 $0.5517 | ||
| VBFB2104N | VBsemi Elec | TO-251 | 0 | $ 1.7384 | ||
| H7P1002DL-VB | VBsemi Elec | TO-251 | 0 | $ 0.7153 | ||
| VBFB2101M | VBsemi Elec | TO-251 | 0 | $ 0.6942 |