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GeneSiC Semiconductor MURT40005R
| Manufacturer | |
| MPN | MURT40005R |
| LCSC Part # | C21391938 |
| Packaging | - |
| Customer # | |
| Key Attributes | 50V 1 Pair Common Anode 1V@200A 400A Single Diodes RoHS |
| Datasheet | GeneSiC Semiconductor MURT40005R |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Diode Configuration | 1 Pair Common Anode | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@200A | |
| Reverse Leakage Current (Ir) | 25uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 400A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Type | Description | |
|---|---|---|
| Diode Configuration | 1 Pair Common Anode | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@200A | |
| Reverse Leakage Current (Ir) | 25uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 400A |
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Features
AI Translation
- High surge capability
- Type coverage 50V to 200V V_RRM
- Isolated package
- Electrically isolated substrate
- Non-ESD sensitive
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 275.9796 | $ 275.98 |
| 200+ | $ 110.1185 | $ 22023.70 |
| 500+ | $ 106.4389 | $ 53219.45 |
| 1,000+ | $ 104.6211 | $ 104621.10 |
Standard Packaging25/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Diode Configuration | 1 Pair Common Anode | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@200A | |
| Reverse Leakage Current (Ir) | 25uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 400A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Type | Description | |
|---|---|---|
| Diode Configuration | 1 Pair Common Anode | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@200A | |
| Reverse Leakage Current (Ir) | 25uA | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | 400A |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- High surge capability
- Type coverage 50V to 200V V_RRM
- Isolated package
- Electrically isolated substrate
- Non-ESD sensitive
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |