FUXINSEMI MMBTA42
| Fabricante | FUXINSEMIAsian Brands |
| N.º de pieza fab. | MMBTA42 |
| Nº LCSC | C908262 |
| Emb. | SOT-23 |
| Número de Cliente | |
| Atrib. clave | TRANS NPN 300V 300mA SOT-23 |
| Hoja de Datos | FUXINSEMI MMBTA42 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | FUXINSEMI | |
| Emb. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 250nA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 300V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | 300mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | FUXINSEMI | |
| Emb. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 250nA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 300V |
| Tipo | Descripción | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | 300mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- High breakdown voltage
- Low collector-emitter saturation voltage
- Complementary to MMBTA92 (PNP)
En stock: 3,020
3,020 En stock, envío inmediato
Mínimo: 10Múltiplo: 10Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 10+ | $ 0.0238$ 0.0215 | $ 0.22 |
| 100+ | $ 0.0185$ 0.0167 | $ 1.67 |
| 300+ | $ 0.0156$ 0.0141 | $ 4.23 |
| 3,000+ | $ 0.014$ 0.0126 | $ 37.80 |
| 6,000+ | $ 0.0125$ 0.0113 | $ 67.80 |
| 9,000+ | $ 0.0117$ 0.0106 | $ 95.40 |
Encapsulado Estándar3000/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | FUXINSEMI | |
| Emb. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 250nA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 300V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | 300mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Fabricante | FUXINSEMI | |
| Emb. | SOT-23 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 250nA | |
| Transition frequency(fT) | 50MHz | |
| Collector - Emitter Voltage VCEO | 300V |
| Tipo | Descripción | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 100 | |
| Pd - Power Dissipation | 350mW | |
| Current - Collector(Ic) | 300mA | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 200mV |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- High breakdown voltage
- Low collector-emitter saturation voltage
- Complementary to MMBTA92 (PNP)
C908262 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Tipo | Detalles |
|---|---|
| ECCN | |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



