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onsemi FQB33N10LTM
| Manufacturer | |
| MPN | FQB33N10LTM |
| LCSC Part # | C898641 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 100V 33A 2V 39mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet | onsemi FQB33N10LTM |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 3.75W;127W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 39mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 30nC@5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.75W;127W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 39mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 30nC@5V |
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Introduction
AI Translation
This N-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to minimize on-resistance and provide superior switching performance and high avalanche energy strength. These devices are suitable for switch-mode power supplies, audio amplifiers, DC motor control, and variable switching power supply applications.
Features
AI Translation
- 33 A, 100 V, R DS(on) = 52 mΩ (max) at VGS = 10 V
- ID = 16.5 A
- Low gate charge (typ. 30 nC)
- Low Crss (typ. 70 pF)
- 100% avalanche tested
- Maximum junction temperature rating 175°C
Applications
AI Translation
- Switch-mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power supply applications
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 3.5872 | $ 3.59 |
| 10+ | $ 3.1957 | $ 31.96 |
| 30+ | $ 2.952 | $ 88.56 |
| 100+ | $ 2.7002 | $ 270.02 |
| 500+ | $ 2.5865 | $ 1293.25 |
| 800+ | $ 2.5377 | $ 2030.16 |
Standard Packaging800/Full Reel | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Pd - Power Dissipation | 3.75W;127W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 39mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 30nC@5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | D2PAK | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 33A | |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 3.75W;127W | |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF | |
| RDS(on) | 39mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | - | |
| Gate Charge(Qg) | 30nC@5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to minimize on-resistance and provide superior switching performance and high avalanche energy strength. These devices are suitable for switch-mode power supplies, audio amplifiers, DC motor control, and variable switching power supply applications.
Features
AI Translation
- 33 A, 100 V, R DS(on) = 52 mΩ (max) at VGS = 10 V
- ID = 16.5 A
- Low gate charge (typ. 30 nC)
- Low Crss (typ. 70 pF)
- 100% avalanche tested
- Maximum junction temperature rating 175°C
Applications
AI Translation
- Switch-mode power supplies
- Audio amplifiers
- DC motor control
- Variable switching power supply applications
C898641 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PSMN057-200B-VB | VBsemi Elec | TO-263 | 10 | $0.7931 $0.8348 | ||
| IRL540NSTRLPBF | Infineon | D2PAK | 387 | $ 1.7092 | ||
| IRL2910STRLPBF | Infineon | D2PAK | 5 | $ 2.9556 | ||
| HUFA76633S3ST-VB | VBsemi Elec | TO-263(D2PAK) | 20 | $0.8260 $0.9717 | ||
| IRF3415STRLPBF | Infineon | D2PAK | 49 | $ 1.6155 | ||
| PSMN070-200B-VB | VBsemi Elec | TO-263 | 10 | $1.7855 $1.8794 | ||
| IRF540NSTRRPBF | Infineon | D2PAK | 730 | $ 2.1917 | ||
| IRF1310NSTRR-VB | VBsemi Elec | TO-263(D2PAK) | 0 | $0.8260 $0.9717 | ||
| IRF1310NSPBF-INF | Infineon | D2PAK | 0 | $ 0.5864 | ||
| YJB70G10B | YANGJIE | TO-263 | 0 | $ 0.6469 |