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Modelos EDAEasyEDA
onsemi FCH023N65S3L4
| Fabricante | |
| N.º de pieza fab. | FCH023N65S3L4 |
| Nº LCSC | C898112 |
| Emb. | TO-247-4 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 650V 75A TO-247-4 |
| Hoja de Datos | onsemi FCH023N65S3L4 |
| Cumplimiento RoHS | 4 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-247-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 175W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.16nF | |
| Gate Charge(Qg) | 222nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-247-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 175W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.16nF | |
| Gate Charge(Qg) | 222nC@10V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Características
Traducción por IA
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 19.5 mΩ
- Ultra Low Gate Charge (Typ. Qg = 222 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 1980 pF)
- 100% Avalanche Tested
- These Devices are Pb −Free and are RoHS Compliant
Aplicaciones
Traducción por IA
- Telecom / Server Power Supplies
- Industrial Power Supplies
- UPS / Solar
En stock: 7
7 En stock, envío inmediato
Mínimo: 1Múltiplo: 1Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 1+ | $ 21.4253 | $ 21.43 |
| 30+ | $ 20.4463 | $ 613.39 |
Encapsulado Estándar30/Full Tube | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-247-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Pd - Power Dissipation | 175W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.16nF | |
| Gate Charge(Qg) | 222nC@10V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | onsemi | |
| Emb. | TO-247-4 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 75A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 175W | |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF | |
| RDS(on) | 23mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 7.16nF | |
| Gate Charge(Qg) | 222nC@10V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Características
Traducción por IA
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 19.5 mΩ
- Ultra Low Gate Charge (Typ. Qg = 222 nC)
- Low Effective Output Capacitance (Typ. C0ss(eff.) = 1980 pF)
- 100% Avalanche Tested
- These Devices are Pb −Free and are RoHS Compliant
Aplicaciones
Traducción por IA
- Telecom / Server Power Supplies
- Industrial Power Supplies
- UPS / Solar
C898112 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| STW65N023M9-4 | ST | TO-247-4 | 6 | $ 27.3392 | ||
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| STW88N65M5-4 | ST | TO-247-4 | 0 | $ 16.3686 | ||
| AIMZA75R016M1HXKSA1 | Infineon | TO-247-4 | 0 | $ 31.6802 | ||
| FCH041N65EFL4 | onsemi | TO-247-4 | 0 | $ 12.816 | ||
| FCH041N65EFLN4 | onsemi | TO-247-4 | 0 | $ 5.1736 |