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onsemi NSVMBT3904DW1T3G product image
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onsemi NSVMBT3904DW1T3G

Manufacturer
MPN
NSVMBT3904DW1T3G
LCSC Part #
C896836
Packaging
SOT-363-6
Customer #
Key Attributes
100 150mW 40V NPN 200mA SOT-363-6 Bipolar Transistor Arrays RoHS
Datasheetonsemi NSVMBT3904DW1T3G
RoHS Compliance4 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.1171$ 0.12
200+$ 0.0454$ 9.08
500+$ 0.0438$ 21.90
1,000+$ 0.043$ 43.00
Standard Packaging10000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays
Manufactureronsemi
PackagingSOT-363-6
Current - Collector Cutoff-
DC Current Gain100
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO40V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))300mV
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Introduction

AI Translation

The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium.

Features

AI Translation
  • SOT−363/SC−88/SC70−6 CASE 419B
  • hFE, 100−300
  • Low VCE(sat), ≤0.4 V
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant