onsemi NVTFS4C13NTWG
| Manufacturer | |
| MPN | NVTFS4C13NTWG |
| LCSC Part # | C896033 |
| Packaging | WDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | 26W 30V 14A 2.1V 7.5mΩ@10V 1 N-channel N-Channel WDFN-8(3.3x3.3) Single FETs, MOSFETs RoHS |
| Datasheet | onsemi NVTFS4C13NTWG |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 443pF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 15.2nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 443pF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 15.2nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which is specially designed to minimize on-resistance while maintaining excellent durability and switching performance, making it suitable for industrial applications.
Features
AI Translation
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize drive losses
- Optimized gate charge to minimize switching losses
- NVTFS4C13NWF - solderable flank product
- NVT prefix for automotive and other applications requiring unique traceability and change control requirements; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applications
AI Translation
- Industrial motor drives
- Industrial power supplies
- Industrial automation
- Battery-powered tools
- Battery protection
- Solar inverters
- UPS and energy inverters
- Energy storage
- Load switches
In-Stock: 50
50 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.8805 | $ 2.88 |
| 10+ | $ 2.8399 | $ 28.40 |
| 30+ | $ 2.8139 | $ 84.42 |
| 100+ | $ 2.7879 | $ 278.79 |
Standard Packaging5000/Full Reel | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 443pF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 15.2nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 443pF | |
| Pd - Power Dissipation | 26W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 14A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 127pF | |
| RDS(on) | 7.5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 770pF | |
| Gate Charge(Qg) | 15.2nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which is specially designed to minimize on-resistance while maintaining excellent durability and switching performance, making it suitable for industrial applications.
Features
AI Translation
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize drive losses
- Optimized gate charge to minimize switching losses
- NVTFS4C13NWF - solderable flank product
- NVT prefix for automotive and other applications requiring unique traceability and change control requirements; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, RoHS compliant
Applications
AI Translation
- Industrial motor drives
- Industrial power supplies
- Industrial automation
- Battery-powered tools
- Battery protection
- Solar inverters
- UPS and energy inverters
- Energy storage
- Load switches
C896033 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| NVTFS4C13NTAG | onsemi | WDFN-8(3.3x3.3) | 16 | $0.4568 $0.7488 | ||
| NTTFS4C13NTAG | onsemi | WDFN-8(3.3x3.3) | 1,496 | $ 0.5271 | ||
| CMSC1653 | Cmos | DFN-8(3.3x3.3) | 15 | $0.1793 $0.1887 | ||
| MS3005X | MIRACLE POWER | PDFN-8(3.3x3.3) | 470 | $0.0848 $0.0892 | ||
| FH8904G6 | XIN FEI HONG | PDFN3.3x3.3-8L | 8,143 | $ 0.1056 | ||
| SIS402DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 13,135 | $ 0.4441 | ||
| ASDM30N65E-R | ASDsemi | DFN3.3x3.3-8 | 1,605 | $ 0.1743 | ||
| NVTFS4C13NWFTAG | onsemi | WDFN-8(3.3x3.3) | 0 | $ 1.3965 | ||
| BSZ130N03MS G | Infineon | TSDSON-8(3.3x3.3) | 0 | $ 1.4671 | ||
| SISA96DN-T1-GE3 | VISHAY | PowerPAK1212-8 | 0 | $ 0.4761 |



