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EDA ModelsEasyEDA
onsemi IRLM220ATF
| Manufacturer | |
| MPN | IRLM220ATF |
| LCSC Part # | C894847 |
| Packaging | SOT-223-4 |
| Customer # | |
| Key Attributes | 200V 1V 2W 800mΩ 1 N-channel SOT-223-4 Single FETs, MOSFETs |
| Datasheet | onsemi IRLM220ATF |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223-4 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 800mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 10.3nC@5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223-4 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 800mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 10.3nC@5V |
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Features
AI Translation
- Avalanche rugged technology
- Robust gate oxide technology
- Lower input capacitance
- Optimized gate charge
- Extended safe operating area
- Lower leakage current: 10 μA (max) at VDS = 200V
- Lower RDS(ON): 0.609 Ω (typ)
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223-4 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | - | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 800mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 10.3nC@5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | SOT-223-4 | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | - |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF | |
| RDS(on) | 800mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 330pF | |
| Gate Charge(Qg) | 10.3nC@5V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Avalanche rugged technology
- Robust gate oxide technology
- Lower input capacitance
- Optimized gate charge
- Extended safe operating area
- Lower leakage current: 10 μA (max) at VDS = 200V
- Lower RDS(ON): 0.609 Ω (typ)
C894847 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |