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onsemi SMUN5330DW1T1G
| Manufacturer | |
| MPN | SMUN5330DW1T1G |
| LCSC Part # | C894411 |
| Packaging | SC-88-6 |
| Customer # | |
| Key Attributes | 3 250mW 100mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SC-88-6 Bipolar Transistor Arrays, Pre-Biased RoHS |
| Datasheet | onsemi SMUN5330DW1T1G |
| RoHS Compliance | 4 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SC-88-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 3 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,5mA | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 1.3kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SC-88-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 3 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,5mA | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 1.3kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
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Introduction
AI Translation
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor and a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Features
AI Translation
- Simplified circuit design
- Reduced PCB space
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and change control requirements; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, RoHS compliant
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0945 | $ 0.09 |
| 200+ | $ 0.0366 | $ 7.32 |
| 500+ | $ 0.0353 | $ 17.65 |
| 1,000+ | $ 0.0347 | $ 34.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SC-88-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 3 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,5mA | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 1.3kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased | |
| Manufacturer | onsemi | |
| Packaging | SC-88-6 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 3 | |
| Vce Saturation(VCE(sat)) | 250mV@10mA,5mA | |
| Operating Temperature | - | |
| Output Voltage(VO(on)) | - |
| Type | Description | |
|---|---|---|
| Input Resistor | 1.3kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 250mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Current - Collector(Ic) | 100mA | |
| Collector - Emitter Voltage VCEO | 50V | |
| type | NPN+PNP | |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor and a monolithic bias network consisting of two resistors — a base series resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and minimizes board space.
Features
AI Translation
- Simplified circuit design
- Reduced PCB space
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and change control requirements; AEC-Q101 qualified with PPAP capability
- Lead-free, halogen-free/BFR-free, RoHS compliant
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |