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EDA ModelsEasyEDA
onsemi NSVMUN5131T1G
| Manufacturer | |
| MPN | NSVMUN5131T1G |
| LCSC Part # | C893966 |
| Packaging | SC-70-3 |
| Customer # | |
| Key Attributes | 50V 8 100mA 202mW PNP 1 PNP Pre-Biased SC-70-3 Single, Pre-Biased Bipolar Transistors RoHS |
| Datasheet | onsemi NSVMUN5131T1G |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.0569 | $ 0.06 |
| 200+ | $ 0.0221 | $ 4.42 |
| 500+ | $ 0.0213 | $ 10.65 |
| 1,000+ | $ 0.0209 | $ 20.90 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | onsemi | |
| Packaging | SC-70-3 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 8 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 2.2kΩ | |
| Resistor Ratio | 1 | |
| Pd - Power Dissipation | 202mW | |
| Input Voltage (VI(on)@Ic,Vce) | 2V@20mA,0.3V | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This series of digital transistors is designed to replace individual devices and their external resistor bias networks. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The BRT eliminates these discrete components by integrating them into a single device. Using BRTs reduces system cost and saves board space.
Features
AI Translation
- Simplified circuit design
- Board space savings
- Reduced component count
- S and NSV prefixes for automotive and other applications with unique sourcing and control change requirements; AEC-Q101 qualified and PPAP capable
- These devices are Pb-free, halogen-free/BFR-free, and RoHS compliant
C893966 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| PDTA124XU,115 | Nexperia | SOT-323-3 | 200 | $ 0.119 | ||
| PDTA123EU,115 | Nexperia | SOT-323 | 50 | $ 0.3963 | ||
| DDTA114EUA-7-F | DIODES | SOT-323 | 1,125 | $ 0.0705 | ||
| MUN5131T1G | onsemi | SC-70 | 0 | $ 0.042 | ||
| MUN5130T1G | onsemi | SC-70 | 0 | $ 0.0283 | ||
| MUN5134T1G | onsemi | SC-70 | 0 | $ 0.0286 | ||
| DTB123YUT106 | ROHM | UMT-3 | 0 | $ 0.0714 | ||
| SMUN5111T1G | onsemi | SC-70(SOT-323) | 0 | $ 0.0385 | ||
| RN2301,LF | TOSHIBA | SC-70 | 0 | $ 0.0499 | ||
| RN2301,LXHF | TOSHIBA | SC-70 | 0 | $ 0.1369 |