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onsemi FDMS86550

Manufacturer
onsemi
MPN
FDMS86550
LCSC Part #
C891105
Packaging
Power-56-8
Customer #
Key Attributes
156W 60V 234A 1.4mΩ@10V 1 N-channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS
Datasheetonsemi FDMS86550
RoHS Compliance4 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingPower-56-8
Output Capacitance(Coss)2.14nF
Ciss-Input Capacitance8.235nF
Pd - Power Dissipation156W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage60V
Current - Continuous Drain(Id)234A
Reverse Transfer Capacitance (Crss)70pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Gate Charge(Qg)110nC
Vgs±20V
Gate Threshold Voltage (Vgs(th))3.3V
TypeN-Channel
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Introduction

AI Translation

This N-channel MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which is specially optimized to minimize on-resistance while maintaining excellent switching performance.

Features

AI Translation
  • Maximum r DS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
  • Maximum r DS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
  • Advanced package and silicon combination for low RDS(ON) and high efficiency
  • Robust MSL1 package design
  • 100% UII tested
  • RoHS compliant

Applications

AI Translation
  • Primary DC-DC MOSFET
  • Secondary Synchronous Rectifier
  • Load Switch