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onsemi FDMS10C4D2N
| Manufacturer | |
| MPN | FDMS10C4D2N |
| LCSC Part # | C891044 |
| Packaging | PQFN-8(5x6) |
| Customer # | |
| Key Attributes | 100V 17A 4V 125W 4.2mΩ@10V 1 N-channel PQFN-8(5x6) Single FETs, MOSFETs RoHS |
| Datasheet | onsemi FDMS10C4D2N |
| RoHS Compliance | 4 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 4.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.5nF | |
| Gate Charge(Qg) | 65nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 4.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.5nF | |
| Gate Charge(Qg) | 65nC@10V |
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Introduction
AI Translation
This N-channel medium-voltage MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance through a best-in-class soft body diode.
Features
AI Translation
- Shielded Gate MOSFET technology
- Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
- Max rDS(on) = 14 mΩ at VGS = 6 V, ID = 22 A
- Qrr 50% lower than other MOSFET suppliers
- Reduced switching noise/EMI
- MSL1 robust package design
- 100% UIS tested
- RoHS compliant
Applications
AI Translation
- Industrial Motor Drives - Industrial Power Supplies - Industrial Automation - Battery-Powered Tools - Battery Protection - Solar Inverters - UPS and Energy Inverters - Energy Storage - Load Switches
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 5.964 | $ 5.96 |
| 10+ | $ 5.8812 | $ 58.81 |
| 30+ | $ 5.826 | $ 174.78 |
| 100+ | $ 5.7707 | $ 577.07 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 4.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.5nF | |
| Gate Charge(Qg) | 65nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | PQFN-8(5x6) | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 17A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 125W | |
| RDS(on) | 4.2mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.5nF | |
| Gate Charge(Qg) | 65nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel medium-voltage MOSFET is manufactured using Fairchild Semiconductor's advanced PowerTrench® process, which incorporates shielded gate technology. This process is optimized to minimize on-resistance while maintaining excellent switching performance through a best-in-class soft body diode.
Features
AI Translation
- Shielded Gate MOSFET technology
- Max rDS(on) = 4.2 mΩ at VGS = 10 V, ID = 44 A
- Max rDS(on) = 14 mΩ at VGS = 6 V, ID = 22 A
- Qrr 50% lower than other MOSFET suppliers
- Reduced switching noise/EMI
- MSL1 robust package design
- 100% UIS tested
- RoHS compliant
Applications
AI Translation
- Industrial Motor Drives - Industrial Power Supplies - Industrial Automation - Battery-Powered Tools - Battery Protection - Solar Inverters - UPS and Energy Inverters - Energy Storage - Load Switches
C891044 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRFH5010TRPBF | Infineon | PQFN-8(5x6) | 46 | $ 1.6898 | ||
| IRFH5110TRPBF | Infineon | PQFN-8(5x6) | 7 | $1.5910 $3.7879 | ||
| IRFH5210TRPBF | Infineon | PQFN-8(5x6) | 7,955 | $ 1.1414 | ||
| FDMS86101DC | onsemi | PQFN-8(5x6) | 6,581 | $ 0.6195 | ||
| NTMFS011N15MC | onsemi | FQFN-8(5x6) | 4 | $7.4837 $17.0082 | ||
| NTMFS010N10GTWG | onsemi | PQFN-8(5x6) | 0 | $ 1.9906 | ||
| NTMFS10N7D2C | onsemi | PQFN-8(5x6) | 0 | $ 2.2478 | ||
| NTMFS015N15MC | onsemi | PQFN-8(5x6) | 0 | $ 5.8877 | ||
| IRFH7194TRPBF | Infineon | PQFN-8(5x6) | 0 | $ 0.4527 | ||
| NTMFS034N15MC | onsemi | PQFN-8(4.9x5.8) | 0 | $ 1.6458 |