onsemi FDFMA3N109
| Manufacturer | |
| MPN | FDFMA3N109 |
| LCSC Part # | C890882 |
| Packaging | VDFN-6(2x2) |
| Customer # | |
| Key Attributes | 1.5W 30V 75mΩ@4.5V 1 N-channel N-Channel VDFN-6(2x2) Single FETs, MOSFETs |
| Datasheet | onsemi FDFMA3N109 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 190pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | - | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 75mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.4nC | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 190pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | - | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 75mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.4nC | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Introduction
This device is designed for boost topology in cellular phones and other ultra-portable applications, offered as a single-package solution. It features a MOSFET with low input capacitance, low total gate charge, and low on-resistance, along with a separately connected Schottky diode with low forward voltage and low reverse leakage current, maximizing boost efficiency. The MicroFET 2x2 package delivers excellent thermal performance for its physical footprint, making it ideal for switching and linear mode applications.
Features
- MOSFET:
- 2.9 A, 30 V, RDS(ON) = 123 mΩ (at VGS = 4.5 V)
- RDS(ON) = 140 mΩ (at VGS = 3.0 V)
- RDS(ON) = 163 mΩ (at VGS = 2.5 V)
- Schottky Diode:
- VF < 0.46 V (at 500 mA)
- MicroFET 2x2 mm package, thickness as low as 0.8 mm
- HBM ESD protection rating typical value 1.8 kV
- RoHS compliant
Applications
- DC-DC buck converter
- Notebook battery power management
- Load switch in notebooks
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 190pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | - | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 75mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.4nC | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | VDFN-6(2x2) | |
| Output Capacitance(Coss) | 30pF | |
| Ciss-Input Capacitance | 190pF | |
| Pd - Power Dissipation | 1.5W | |
| Configuration | - | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | - | |
| Reverse Transfer Capacitance (Crss) | 20pF | |
| RDS(on) | 75mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 2.4nC | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Type | N-Channel |
Introduction
This device is designed for boost topology in cellular phones and other ultra-portable applications, offered as a single-package solution. It features a MOSFET with low input capacitance, low total gate charge, and low on-resistance, along with a separately connected Schottky diode with low forward voltage and low reverse leakage current, maximizing boost efficiency. The MicroFET 2x2 package delivers excellent thermal performance for its physical footprint, making it ideal for switching and linear mode applications.
Features
- MOSFET:
- 2.9 A, 30 V, RDS(ON) = 123 mΩ (at VGS = 4.5 V)
- RDS(ON) = 140 mΩ (at VGS = 3.0 V)
- RDS(ON) = 163 mΩ (at VGS = 2.5 V)
- Schottky Diode:
- VF < 0.46 V (at 500 mA)
- MicroFET 2x2 mm package, thickness as low as 0.8 mm
- HBM ESD protection rating typical value 1.8 kV
- RoHS compliant
Applications
- DC-DC buck converter
- Notebook battery power management
- Load switch in notebooks
C890882 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |