UTC UTM2054G(Z0)-AB3-R
| Manufacturer | UTCAsian Brands |
| MPN | UTM2054G(Z0)-AB3-R |
| LCSC Part # | C84904 |
| Packaging | SOT-89 |
| Customer # | |
| Key Attributes | MOSFET N-CH 20V 5A SOT-89 |
| Datasheet | UTC UTM2054G(Z0)-AB3-R |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | SOT-89 | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 1.47W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 450pF | |
| Gate Charge(Qg) | 11.5nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | SOT-89 | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 1.47W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 450pF | |
| Gate Charge(Qg) | 11.5nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- RDS(ON) = 35mΩ @VGS = 10V
- RDS(ON) = 45mΩ @VGS = 4.5V
- RDS(ON) = 110mΩ @VGS = 2.5V
- Ultra low gate charge ( typical 11.5 nC )
- Low reverse transfer capacitance ( CRSS = typical 60 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.265 | $ 0.27 |
| 10+ | $ 0.2249 | $ 2.25 |
| 30+ | $ 0.2077 | $ 6.23 |
| 100+ | $ 0.1863 | $ 18.63 |
| 500+ | $ 0.1767 | $ 88.35 |
| 1,000+ | $ 0.171 | $ 171.00 |
Standard Packaging4000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | SOT-89 | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 1.47W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 450pF | |
| Gate Charge(Qg) | 11.5nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | UTC | |
| Packaging | SOT-89 | |
| Output Capacitance(Coss) | 100pF | |
| Pd - Power Dissipation | 1.47W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 5A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF | |
| RDS(on) | 35mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 450pF | |
| Gate Charge(Qg) | 11.5nC@4.5V | |
| Vgs | ±16V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The UTM2054 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
Features
AI Translation
- RDS(ON) = 35mΩ @VGS = 10V
- RDS(ON) = 45mΩ @VGS = 4.5V
- RDS(ON) = 110mΩ @VGS = 2.5V
- Ultra low gate charge ( typical 11.5 nC )
- Low reverse transfer capacitance ( CRSS = typical 60 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
C84904 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |


