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Jingdao Microelectronics F10N70 product image
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Jingdao Microelectronics F10N70

Manufacturer
MPN
F10N70
LCSC Part #
C7469040
Packaging
ITO-220ABW
Customer #
Key Attributes
10A, 700V N-CHANNEL POWER MOSFET
DatasheetJingdao Microelectronics F10N70
Alternative Parts3
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerJingdao Microelectronics
PackagingITO-220ABW
Drain to Source Voltage700V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)140pF
Current - Continuous Drain(Id)10A
Ciss-Input Capacitance1.65nF
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss)9pF
RDS(on)900mΩ@10V
Number1 N-channel
Gate Charge(Qg)28nC@10V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel

Introduction

AI Translation

The F10N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on- state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.

Features

AI Translation
  • R DS(ON) ≤ 1.2 Ω at V GS = 10V, I D = 5.0A
  • Fast switching capability
  • Avalanche energy tested
  • Improved dv/dt capability, high ruggedness

Applications

AI Translation
  • Switching power supplies
  • Adapters

Alternative Parts

MPNManufacturerAlternative TypePackagingAvailabilityUnit Price
F10N70LJingdao MicroelectronicsSimilarTO-220F-3L256$ 0.5946
F10N65LJingdao MicroelectronicsSimilarTO-220F-3L24$ 0.4851
F12N65LJingdao MicroelectronicsSimilarTO-220F-3L130$ 0.5667
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