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Transphorm TP90H180PS
| Manufacturer | |
| MPN | TP90H180PS |
| LCSC Part # | C7401588 |
| Packaging | TO-220AB |
| Customer # | |
| Key Attributes | 900V 15A 2.1V 78W 205mΩ@10V 1 N-channel TO-220AB Single FETs, MOSFETs RoHS |
| Datasheet | Transphorm TP90H180PS |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Transphorm | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 78W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 780pF | |
| Gate Charge(Qg) | 10nC@8V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Transphorm | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 78W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 780pF | |
| Gate Charge(Qg) | 10nC@8V |
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Introduction
AI Translation
TP90H180PS is a 900V, 170mΩ GaN FET in a normally-off configuration. It combines advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Compared to silicon devices, Transphorm's GaN devices improve efficiency by reducing gate charge, minimizing crossover losses, and lowering reverse recovery charge.
Features
AI Translation
- JEDEC-qualified GaN technology
- Production-tested dynamic on-resistance (RDS(on) eff)
- Robust design, featuring:
- Intrinsic lifetime testing
- Wide gate safe operating margin
- Transient overvoltage capability
- Ultra-low reverse recovery charge (QRR)
- Reduced crossover losses
- RoHS-compliant and halogen-free package
Applications
AI Translation
- Data Communications - Wide Range of Industrial Applications - Photovoltaic Inverters - Servo Motors
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 26.8545 | $ 26.85 |
| 200+ | $ 10.7155 | $ 2143.10 |
| 500+ | $ 10.3578 | $ 5178.90 |
| 1,000+ | $ 10.1805 | $ 10180.50 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Transphorm | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 78W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 780pF | |
| Gate Charge(Qg) | 10nC@8V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Transphorm | |
| Packaging | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 900V | |
| Current - Continuous Drain(Id) | 15A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 78W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 205mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 780pF | |
| Gate Charge(Qg) | 10nC@8V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
TP90H180PS is a 900V, 170mΩ GaN FET in a normally-off configuration. It combines advanced high-voltage GaN HEMT and low-voltage silicon MOSFET technologies, delivering superior reliability and performance. Compared to silicon devices, Transphorm's GaN devices improve efficiency by reducing gate charge, minimizing crossover losses, and lowering reverse recovery charge.
Features
AI Translation
- JEDEC-qualified GaN technology
- Production-tested dynamic on-resistance (RDS(on) eff)
- Robust design, featuring:
- Intrinsic lifetime testing
- Wide gate safe operating margin
- Transient overvoltage capability
- Ultra-low reverse recovery charge (QRR)
- Reduced crossover losses
- RoHS-compliant and halogen-free package
Applications
AI Translation
- Data Communications - Wide Range of Industrial Applications - Photovoltaic Inverters - Servo Motors
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| STP21N90K5 | ST | Similar | TO-220 | 930 | $ 3.8569 | ||
| IPP90R340C3 | Infineon | Similar | TO-220 | 38 | $ 5.0246 | ||
| MS20N85ICT0 | MASPOWER | Similar | TO-220 | 50 | $ 1.9562 | ||
| IXFP14N85XM | Littelfuse/IXYS | Similar | TO-220 | 160 | $ 4.6643 | ||
| STP20N90K5 | ST | Similar | TO-220 | 0 | $ 11.5646 |
5 more alternative parts.View all substitutes