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VISHAY SIDR392DP-T1-RE3 product image
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VISHAY SIDR392DP-T1-RE3

Manufacturer
VISHAY
MPN
SIDR392DP-T1-RE3
LCSC Part #
C7316079
Packaging
-
Customer #
Key Attributes
30V 2.2V 0.62mΩ@10V 1 N-channel Single FETs, MOSFETs
DatasheetVISHAY SIDR392DP-T1-RE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 3.5885$ 3.59
200+$ 1.4321$ 286.42
500+$ 1.3851$ 692.55
1,000+$ 1.3609$ 1360.90
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
Packaging-
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Current - Continuous Drain(Id)82A;100A
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation6.25W;125W
Reverse Transfer Capacitance (Crss@Vds)626pF
RDS(on)0.62mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.53nF
Gate Charge(Qg)188nC@10V
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Features

AI Translation
  • TrenchFET 4th generation power MOSFET
  • Top-side cooling provides an additional thermal dissipation path
  • Optimized Qg, Qgd, and Qgd/Qgs ratio for reduced switching-related power loss
  • 100% Rg and UIS tested

Applications

AI Translation
  • Synchronous Rectification
  • High Power Density DC/DC
  • Synchronous Buck Converter
  • OR-ing
  • Load Switch
  • Battery Management