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MATSUKI ME10N15-G
| Manufacturer | MATSUKIAsian Brands |
| MPN | ME10N15-G |
| LCSC Part # | C709773 |
| Packaging | TO-252-3 |
| Customer # | |
| Key Attributes | 150V 7.6A 3V 32.1W 1 N-channel TO-252-3 Single FETs, MOSFETs |
| Datasheet | MATSUKI ME10N15-G |
| Alternative Parts | 8 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 7.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 32.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 538pF | |
| Gate Charge(Qg) | 160nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 7.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 32.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 538pF | |
| Gate Charge(Qg) | 160nC@10V |
Introduction
ME10N15 is an N-channel logic-level enhancement-mode power MOSFET utilizing high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-state resistance. These devices are particularly suited for low-voltage applications such as mobile phones, notebook computer power management, and other battery-powered circuits, as well as ultra-compact SMT packages requiring extremely low on-state power dissipation.
Features
- R DS(ON) ≤ 345mΩ at V GS = 10V
- R DS(ON) ≤ 365mΩ at V GS = 4.5V
- Ultra-high density cell design for extremely low R DS(ON)
- Excellent on-resistance and maximum DC current capability
Applications
- Notebook PC power management
- DC/DC converters
- Load switches
- LCD display inverters
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.1951 | $ 0.20 |
| 10+ | $ 0.1923 | $ 1.92 |
| 30+ | $ 0.1905 | $ 5.72 |
| 100+ | $ 0.1886 | $ 18.86 |
Standard Packaging2500/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 7.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 32.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 538pF | |
| Gate Charge(Qg) | 160nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MATSUKI | |
| Packaging | TO-252-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 150V | |
| Current - Continuous Drain(Id) | 7.6A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 32.1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF | |
| RDS(on) | - | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 538pF | |
| Gate Charge(Qg) | 160nC@10V |
Introduction
ME10N15 is an N-channel logic-level enhancement-mode power MOSFET utilizing high cell density DMOS trench technology. This high-density process is specifically designed to minimize on-state resistance. These devices are particularly suited for low-voltage applications such as mobile phones, notebook computer power management, and other battery-powered circuits, as well as ultra-compact SMT packages requiring extremely low on-state power dissipation.
Features
- R DS(ON) ≤ 345mΩ at V GS = 10V
- R DS(ON) ≤ 365mΩ at V GS = 4.5V
- Ultra-high density cell design for extremely low R DS(ON)
- Excellent on-resistance and maximum DC current capability
Applications
- Notebook PC power management
- DC/DC converters
- Load switches
- LCD display inverters
C709773 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| ME08N20 | MATSUKI | TO-252-3 | 100 | $ 0.4455 | ||
| ME08N20-G | MATSUKI | TO-252-3 | 1,450 | $ 0.2444 | ||
| ME20N15-G | MATSUKI | TO-252-3 | 340 | $ 0.593 | ||
| ME20N15 | MATSUKI | TO-252-3L | 275 | $ 0.5108 | ||
| ME15N25-G | MATSUKI | TO-252-3L | 2 | $ 0.5351 | ||
| ME10N15 | MATSUKI | TO-252-3 | 0 | $ 0.2292 | ||
| ME12N15-G | MATSUKI | TO-252-3 | 0 | $ 0.4008 | ||
| ME12N15 | MATSUKI | TO-252-3 | 0 | $ 0.4305 |