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RENESAS UPA2815T1S-E2-AT product image
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RENESAS UPA2815T1S-E2-AT

Manufacturer
MPN
UPA2815T1S-E2-AT
LCSC Part #
C7090165
Packaging
HWSON-8(3.3x3.3)
Customer #
Key Attributes
30V 21A 14.5W 11mΩ@10V 1 P-Channel HWSON-8(3.3x3.3) Single FETs, MOSFETs RoHS
DatasheetRENESAS UPA2815T1S-E2-AT
Alternative Parts10
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.27$ 1.27
200+$ 0.5077$ 101.54
500+$ 0.491$ 245.50
1,000+$ 0.4819$ 481.90
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerRENESAS
PackagingHWSON-8(3.3x3.3)
Operating Temperature-
Drain to Source Voltage30V
Current - Continuous Drain(Id)21A
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation14.5W
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.76nF
Gate Charge(Qg)47nC@10V

Introduction

AI Translation

μPA2815T1S is a P-channel MOSFET designed for DC/DC converter and power management applications in portable devices.

Features

AI Translation
  • VDSS = -30V (TA = 25°C)
  • Low on-resistance
  • RDS(on) = 11 mΩ max (VGS = -10 V, ID = -21 A)
  • 4.5 V gate drive compatible
  • Small, thin surface mount package with heatsink
  • Lead-free and halogen-free

Applications

AI Translation
  • UHF band communication transmitter applications
  • UHF band industrial applications

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
LWP4020AD3Lewa MicroPDFN-8L(3.3x3.3)4,950$ 0.2337
FH32P03G6XIN FEI HONGPDFN3.3x3.3-8L23$ 0.1061
ASDM30P30BE-RASDsemiPDFN3.3x3.3-83,265$ 0.1661
XR40P03DXNRUSEMIPDFN-8L(3.3x3.3)2,145$ 0.1005
SI7617DN-T1-GE3VISHAYPowerPAK1212-86,000$ 0.785
SISH617DN-T1-GE3VISHAYPowerPAK1212-8367$ 0.9277
JSM7409CJSMSEMIDFN-8L(3.3x3.3)29,955$ 0.1618
SISH625DN-T1-GE3VISHAYPowerPAK1212-8SH4$ 0.7669
FH38P03G6XIN FEI HONGDFN-8-EP(3.3x3.3)3,190$ 0.143
NCE30P25QNCEDFN-8L(3.3x3.3)0$ 0.4097