MICROCHIP APT50M50JLL
| Manufacturer | |
| MPN | APT50M50JLL |
| LCSC Part # | C7077498 |
| Packaging | SOT-227B-4 |
| Customer # | |
| Key Attributes | 595W 500V 71A 50mΩ@10V 1 N-channel N-Channel SOT-227B-4 Single FETs, MOSFETs RoHS |
| Datasheet | MICROCHIP APT50M50JLL |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Output Capacitance(Coss) | 2.06nF | |
| Ciss-Input Capacitance | 10.55nF | |
| Pd - Power Dissipation | 595W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 71A | |
| Reverse Transfer Capacitance (Crss) | 105pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Output Capacitance(Coss) | 2.06nF | |
| Ciss-Input Capacitance | 10.55nF | |
| Pd - Power Dissipation | 595W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 71A | |
| Reverse Transfer Capacitance (Crss) | 105pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Introduction
Power MOS 7° is a new generation of low-loss, high-voltage, N-channel enhancement-mode power MOSFETs. Power MOS 7° addresses conduction and switching loss issues by significantly reducing R<sub>DS(ON)</sub> and Q<sub>g</sub>. Power MOS 7° combines lower conduction and switching losses with the inherently fast switching speed of Advanced Power Technology's (APT) patented metal gate structure.
Features
- Lower input capacitance
- Lower Miller capacitance
- Lower gate charge Qg
- Higher power dissipation
- Easier to drive
- SOT-227 package
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Output Capacitance(Coss) | 2.06nF | |
| Ciss-Input Capacitance | 10.55nF | |
| Pd - Power Dissipation | 595W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 71A | |
| Reverse Transfer Capacitance (Crss) | 105pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | SOT-227B-4 | |
| Output Capacitance(Coss) | 2.06nF | |
| Ciss-Input Capacitance | 10.55nF | |
| Pd - Power Dissipation | 595W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 71A | |
| Reverse Transfer Capacitance (Crss) | 105pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 200nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
Introduction
Power MOS 7° is a new generation of low-loss, high-voltage, N-channel enhancement-mode power MOSFETs. Power MOS 7° addresses conduction and switching loss issues by significantly reducing R<sub>DS(ON)</sub> and Q<sub>g</sub>. Power MOS 7° combines lower conduction and switching losses with the inherently fast switching speed of Advanced Power Technology's (APT) patented metal gate structure.
Features
- Lower input capacitance
- Lower Miller capacitance
- Lower gate charge Qg
- Higher power dissipation
- Easier to drive
- SOT-227 package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

