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GeneSiC Semiconductor MBRT60060
| Manufacturer | |
| MPN | MBRT60060 |
| LCSC Part # | C6903289 |
| Packaging | - |
| Customer # | |
| Key Attributes | 1 Pair Common Cathode 600A 60V 800mV@300A Diode Arrays RoHS |
| Datasheet | GeneSiC Semiconductor MBRT60060 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 4kA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 600A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 60V | |
| Voltage - Forward(Vf@If) | 800mV@300A | |
| Reverse Leakage Current (Ir) | 1mA@60V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 4kA | |
| Diode Configuration | 1 Pair Common Cathode |
| Type | Description | |
|---|---|---|
| Current - Rectified | 600A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 60V | |
| Voltage - Forward(Vf@If) | 800mV@300A | |
| Reverse Leakage Current (Ir) | 1mA@60V |
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Features
AI Translation
- High surge capability
- Reverse repetitive peak voltage (VRR) range: 45V to 100V
- Isolated package
- Electrically isolated substrate
- Insensitive to ESD
- Three-tower package
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 324.2385 | $ 324.24 |
| 200+ | $ 129.3742 | $ 25874.84 |
| 480+ | $ 125.0505 | $ 60024.24 |
| 1,000+ | $ 122.914 | $ 122914.00 |
Standard Packaging40/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 4kA | |
| Diode Configuration | 1 Pair Common Cathode | |
| Current - Rectified | 600A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 60V | |
| Voltage - Forward(Vf@If) | 800mV@300A | |
| Reverse Leakage Current (Ir) | 1mA@60V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Diode Arrays | |
| Manufacturer | GeneSiC Semiconductor | |
| Packaging | - | |
| Non-Repetitive Peak Forward Surge Current | 4kA | |
| Diode Configuration | 1 Pair Common Cathode |
| Type | Description | |
|---|---|---|
| Current - Rectified | 600A | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse(Vr) | 60V | |
| Voltage - Forward(Vf@If) | 800mV@300A | |
| Reverse Leakage Current (Ir) | 1mA@60V |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- High surge capability
- Reverse repetitive peak voltage (VRR) range: 45V to 100V
- Isolated package
- Electrically isolated substrate
- Insensitive to ESD
- Three-tower package
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |