Images for reference only
EDA ModelsEasyEDA
TOSHIBA TK4R3E06PL,S1X
| Manufacturer | |
| MPN | TK4R3E06PL,S1X |
| LCSC Part # | C6880968 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | 60V 80A 2.5V 87W 7.2mΩ@4.5V 1 N-channel TO-220 Single FETs, MOSFETs RoHS |
| Datasheet | TOSHIBA TK4R3E06PL,S1X |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 87W | |
| RDS(on) | 7.2mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.28nF | |
| Gate Charge(Qg) | 48.2nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 87W | |
| RDS(on) | 7.2mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.28nF | |
| Gate Charge(Qg) | 48.2nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
650 V CoolSiC™ is built on Infineon's mature silicon carbide technology developed over more than 20 years. Leveraging the wide-bandgap properties of SiC material, the 650 V CoolSiC™ MOSFET combines outstanding performance, high reliability, and ease of use. It is suited for high-temperature and harsh operating conditions, enabling simple and cost-effective deployment at maximum system efficiency.
Features
AI Translation
- High-speed switching
- Low gate charge: QSW = 15.1 nC (typical)
- Low output charge: Qoss = 39 nC (typical)
- Low drain-source on-resistance: RDS(ON) = 3.3mΩ (typical) (VGS = 10V)
- Low leakage current: IDSS = 10μA (max) (VDS = 60V)
- Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10V, ID = 0.5mA)
Applications
AI Translation
- High-efficiency DC-DC converter
- Switching regulator
- Motor driver
Out of Stock
Notify Me
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.6093 | $ 1.61 |
| 200+ | $ 0.6431 | $ 128.62 |
| 500+ | $ 0.6215 | $ 310.75 |
| 1,000+ | $ 0.6107 | $ 610.70 |
Standard Packaging50/Full Tube | ||
Better price for more quantity?
$
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 87W | |
| RDS(on) | 7.2mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.28nF | |
| Gate Charge(Qg) | 48.2nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TOSHIBA | |
| Packaging | TO-220 | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 87W | |
| RDS(on) | 7.2mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.28nF | |
| Gate Charge(Qg) | 48.2nC@10V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
650 V CoolSiC™ is built on Infineon's mature silicon carbide technology developed over more than 20 years. Leveraging the wide-bandgap properties of SiC material, the 650 V CoolSiC™ MOSFET combines outstanding performance, high reliability, and ease of use. It is suited for high-temperature and harsh operating conditions, enabling simple and cost-effective deployment at maximum system efficiency.
Features
AI Translation
- High-speed switching
- Low gate charge: QSW = 15.1 nC (typical)
- Low output charge: Qoss = 39 nC (typical)
- Low drain-source on-resistance: RDS(ON) = 3.3mΩ (typical) (VGS = 10V)
- Low leakage current: IDSS = 10μA (max) (VDS = 60V)
- Enhancement mode: Vth = 1.5 to 2.5V (VDS = 10V, ID = 0.5mA)
Applications
AI Translation
- High-efficiency DC-DC converter
- Switching regulator
- Motor driver
C6880968 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DOP90N10-L | DOINGTER | TO-220 | 304 | $0.4747 $0.5159 | ||
| SL80N10 | Slkor | TO-220 | 14 | $ 0.677 | ||
| RS100N100T | REASUNOS | TO-220 | 169 | $0.4237 $0.446 | ||
| OSP100N10G | OSEN | TO-220AB | 49 | $ 0.5068 | ||
| HSP120N12A | HUASHUO | TO-220 | 200 | $ 0.8041 | ||
| FH1610PS | XIN FEI HONG | TO-220 | 40 | $ 0.4979 | ||
| HSP1504 | HUASHUO | TO-220 | 160 | $ 0.9391 | ||
| MCP90N06Y-BP | MCC | TO-220AB(H) | 0 | $ 0.3987 | ||
| AGM6080C | AGMSEMI | TO-220C | 0 | $ 0.4463 | ||
| IPP80N06S4-07 | Infineon | TO-220-3 | 0 | $ 1.721 |