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Infineon IRLR3110ZTRPBF
| Manufacturer | |
| MPN | IRLR3110ZTRPBF |
| LCSC Part # | C67277 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 63A TO-252 |
| Datasheet | Infineon IRLR3110ZTRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 310pF | |
| Pd - Power Dissipation | 140W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 63A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.98nF | |
| Gate Charge(Qg) | 48nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 310pF | |
| Pd - Power Dissipation | 140W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 63A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.98nF | |
| Gate Charge(Qg) | 48nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
Features
AI Translation
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Applications
AI Translation
- Industrial applications
In-Stock: 2,457
2,457 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2247 | $ 1.22 |
| 10+ | $ 0.9771 | $ 9.77 |
| 30+ | $ 0.8542 | $ 25.63 |
| 100+ | $ 0.7329 | $ 73.29 |
| 500+ | $ 0.5525 | $ 276.25 |
| 1,000+ | $ 0.5148 | $ 514.80 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 310pF | |
| Pd - Power Dissipation | 140W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 63A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.98nF | |
| Gate Charge(Qg) | 48nC | |
| Vgs | ±16V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TO-252 | |
| Output Capacitance(Coss) | 310pF | |
| Pd - Power Dissipation | 140W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 63A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF | |
| RDS(on) | 14mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.98nF | |
| Gate Charge(Qg) | 48nC | |
| Vgs | ±16V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
Features
AI Translation
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
Applications
AI Translation
- Industrial applications
C67277 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IRLR3110ZTRLPBF | Infineon | DPAK(TO-252AA) | 2 | $ 4.1345 | ||
| HSU0096 | HUASHUO | TO-252-2L | 980 | $ 0.2385 | ||
| CMD120N15 | Cmos | TO-252 | 1,011 | $0.9324 $0.9814 | ||
| IPD068N10N3G(UMW) | UMW | TO-252 | 564 | $ 0.4984 | ||
| OSD100N10G | OSEN | TO-252 | 2,001 | $ 0.4178 | ||
| IPD70N10S3L-12 | Infineon | TO-252-3 | 22 | $ 2.4216 | ||
| WSF70N10G | Winsok Semicon | TO-252-2L | 409 | $0.4292 $0.4768 | ||
| XRS80N10 | XNRUSEMI | TO252-3L | 380 | $0.3565 $0.3752 | ||
| CJU80SN10 | JSCJ | TO-252-2L | 7,992 | $ 0.5509 | ||
| IPD90N10S4L06ATMA1 | Infineon | TO-252 | 1 | $ 3.1941 |