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EDA ModelsEasyEDA
ST STP45N65M5
| Manufacturer | |
| MPN | STP45N65M5 |
| LCSC Part # | C672233 |
| Packaging | TO-220 |
| Customer # | |
| Key Attributes | MOSFET 650V 35A TO-220 |
| Datasheet | ST STP45N65M5 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 82pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 35A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 78mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.47nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 82pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 35A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 78mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.47nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
AI Translation
- Worldwide best RDS(on) * area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
In-Stock: 4
4 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 12.729 | $ 12.73 |
| 10+ | $ 11.4634 | $ 114.63 |
| 50+ | $ 10.6917 | $ 534.59 |
| 100+ | $ 10.0451 | $ 1004.51 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 82pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 35A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 78mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.47nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-220 | |
| Output Capacitance(Coss) | 82pF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 35A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| RDS(on) | 78mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.47nF | |
| Gate Charge(Qg) | 82nC@10V | |
| Vgs | ±25V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
AI Translation
- Worldwide best RDS(on) * area
- Higher VDSS rating and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Applications
AI Translation
- Switching applications
C672233 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| STP57N65M5 | ST | TO-220 | 3 | $ 16.21 | ||
| NTP082N65S3HF | onsemi | TO-220 | 4 | $ 11.7932 | ||
| NTP082N65S3F | onsemi | TO-220 | 41 | $ 5.3763 | ||
| FCP067N65S3 | onsemi | TO-220 | 139 | $ 8.4678 | ||
| WTM40N65AP | WPMtek | TO-220 | 6 | $ 2.1544 | ||
| NTP067N65S3H | onsemi | TO-220 | 5 | $ 12.2806 | ||
| NCE65NF099 | NCE | TO-220 | 882 | $ 3.0548 | ||
| FCP110N65F | onsemi | TO-220 | 0 | $ 6.5213 | ||
| TPP65R075DFD | WUXI UNIGROUP MICRO | TO-220 | 0 | $ 2.8138 | ||
| NTPF082N65S3F | onsemi | TO-220 | 0 | $ 12.8265 |