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VISHAY SISH472DN-T1-GE3 product image
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VISHAY SISH472DN-T1-GE3

Manufacturer
VISHAY
MPN
SISH472DN-T1-GE3
LCSC Part #
C6680145
Packaging
-
Customer #
Key Attributes
30V 2.5V 8.9mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS
DatasheetVISHAY SISH472DN-T1-GE3
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.5471$ 0.55
200+$ 0.2183$ 43.66
500+$ 0.2107$ 105.35
1,000+$ 0.2077$ 207.70
Standard Packaging3000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
Packaging-
Operating Temperature-55℃~+150℃
Drain to Source Voltage30V
Current - Continuous Drain(Id)15A;20A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation3.5W;28W
RDS(on)8.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)997pF
Gate Charge(Qg)30nC@10V
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Introduction

AI Translation

The third-generation power MOSFETs provide designers with the best combination of fast switching, rugged device design, low on-resistance, and cost-effectiveness. The D2PAK (TO-263) is a surface-mount power package capable of accommodating die sizes up to HEX-4. It offers the highest power capability and lowest possible on-resistance of any existing surface-mount package. Due to its low internal connection resistance, the D2PAK (TO-263) is suitable for high-current applications and can dissipate up to 2.0 W of power in typical SMT applications.

Features

AI Translation
  • TrenchFET Power MOSFET
  • Optimized for synchronous buck operation
  • 100% Rg and UIS tested
  • RoHS compliant
  • Halogen-free

Applications

AI Translation
  • Laptop CPU core
  • High-end switching