AOS AOWF11S65
| Manufacturer | |
| MPN | AOWF11S65 |
| LCSC Part # | C6500769 |
| Packaging | TO-262F |
| Customer # | |
| Key Attributes | 650V 11A 2.6V 399mΩ@10V 1 N-channel TO-262F Single FETs, MOSFETs RoHS |
| Datasheet | AOS AOWF11S65 |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-262F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| RDS(on) | 399mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 646pF | |
| Gate Charge(Qg) | 13.2nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-262F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| RDS(on) | 399mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 646pF | |
| Gate Charge(Qg) | 13.2nC@10V |
Introduction
AOW11S65 and AOWF11S65 are manufactured using an advanced αMOS high-voltage process, designed to deliver high performance and high reliability for switching applications. These devices feature low on-resistance (R<sub>DS(on)</sub>), low gate charge (Qg), and low output capacitance stored energy (EOSS), with guaranteed avalanche capability, enabling rapid adoption in both new and existing offline power supply designs.
Features
- Low gate charge
- Ultra-low on-resistance
- High avalanche ruggedness
Applications
- Switching applications
| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 3.1978 | $ 3.20 |
| 200+ | $ 1.2761 | $ 255.22 |
| 500+ | $ 1.2337 | $ 616.85 |
| 1,000+ | $ 1.2125 | $ 1212.50 |
Standard Packaging1000/Full Tube | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-262F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| RDS(on) | 399mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 646pF | |
| Gate Charge(Qg) | 13.2nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-262F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 1.1pF | |
| RDS(on) | 399mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 646pF | |
| Gate Charge(Qg) | 13.2nC@10V |
Introduction
AOW11S65 and AOWF11S65 are manufactured using an advanced αMOS high-voltage process, designed to deliver high performance and high reliability for switching applications. These devices feature low on-resistance (R<sub>DS(on)</sub>), low gate charge (Qg), and low output capacitance stored energy (EOSS), with guaranteed avalanche capability, enabling rapid adoption in both new and existing offline power supply designs.
Features
- Low gate charge
- Ultra-low on-resistance
- High avalanche ruggedness
Applications
- Switching applications
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| LSF65R380HT | LONTEN | TO-262-3 | 688 | $ 0.7846 | ||
| AOW11S65 | AOS | TO-262 | 0 | $ 3.6403 | ||
| AOWF15S65 | AOS | TO-262F | 0 | $ 2.0063 | ||
| AOW15S65 | AOS | TO-262 | 0 | $ 4.0732 | ||
| AOWF450A70 | AOS | TO-262F | 0 | $ 1.2558 | ||
| AOW25S65 | AOS | TO-262 | 0 | $ 5.3589 | ||
| AOWF25S65 | AOS | TO-262F | 0 | $ 6.1075 | ||
| AOW11S60 | AOS | TO-262 | 0 | $ 2.92 | ||
| IPI65R190C6 | Infineon | TO-262-3 | 0 | $ 4.4609 | ||
| STI18N65M2 | ST | I2PAK | 0 | $ 1.7282 |