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RENESAS X28C512P-12 product image
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RENESAS X28C512P-12

Manufacturer
MPN
X28C512P-12
LCSC Part #
C6358296
Packaging
DIP-32
Customer #
Key Attributes
64K x 8 Bit Byte Alterable EEPROM
DatasheetRENESAS X28C512P-12
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QtyUnit Price(Reference Only)Total Amount
1+$ 84.9684$ 84.97
200+$ 33.9034$ 6780.68
500+$ 32.7698$ 16384.90
1,000+$ 32.2106$ 32210.60
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerRENESAS
PackagingDIP-32
Operating Temperature0℃~+70℃
FeaturesHardware write protection function;Software write protection function
Memory Size512Kbit
Voltage - Supply4.5V~5.5V;50mA
Clock Frequency-
Access Time120ns
Data Retention - TDR (Year)100 Years
Write Cycle Time(tWC)10ms
Standby Supply Current3mA
Write Cycle Endurance100,000 cycles
InterfaceParallel Port (Parallel)

Introduction

AI Translation

The X28C512/513 is a 64Kx8 EEPROM, fabricated with Xicor’s proprietary, high performance, floating gate CMOS technology. Like all Xicor programmable nonvolatile memories, the X28C512/513 is a 5V only device. The X28C512/513 features the JEDEC approved pin out for byte wide memories, compatible with industry standard EPROMS. The X28C512/513 supports a 128-byte page write operation, effectively providing a 39μs/ byte write cycle and enabling the entire memory to be written in less than 2.5 seconds. The X28C512/513 also features DATA Polling and Toggle Bit Polling, system software support schemes used to indicate the early completion of a write cycle. In addition, the X28C512/513 supports the software data protection option.

Features

AI Translation
  • Access time: 90ns
  • Simple byte and page write
  • Single 5V supply
  • No external high voltages or vPP control circuits
  • Self-timed
  • No erase before write
  • No complex programming algorithms
  • No overerase problem
  • Low power CMOS
  • Active: 50mA
  • Standby: 500μμ
  • Software data protection
  • Protects data against system level inadverten writes
  • High speed page write capability
  • Highly reliable Direct Write™ cell
  • Endurance: 100,000 write cycles
  • Data retention: 100 years
  • Early end of write detection
  • DATA polling
  • Toggle bit polling
  • Two PLCC and LCC pinouts
  • X28C512
  • X28C010 EPROM pin compatible
  • X28C513
  • Compatible with lower density EEPROMs