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onsemi NTP095N65S3HF

Manufacturer
onsemi
MPN
NTP095N65S3HF
LCSC Part #
C604469
Packaging
TO-220
Customer #
Key Attributes
272W 650V 36A 5V 95mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS
Datasheetonsemi NTP095N65S3HF
RoHS Compliance4 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 13.4259$ 13.43
10+$ 12.1327$ 121.33
30+$ 11.0085$ 330.26
100+$ 10.3473$ 1034.73
Standard Packaging800/Full Tube
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingTO-220
Output Capacitance(Coss)61pF
Pd - Power Dissipation272W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage650V
Current - Continuous Drain(Id)36A
Gate Threshold Voltage (Vgs(th))5V
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)95mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.93nF
Gate Charge(Qg)66nC@10V
Vgs±30V
TypeN-Channel
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Introduction

AI Translation

SUPERFET III MOSFET is onsemi's new high-voltage super-junction (SJ) MOSFET series utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide variety of power supply systems where miniaturization and higher efficiency are required. The SUPERFET III FRFET MOSFET features optimized body diode reverse recovery performance, eliminating the need for additional components and improving system reliability.

Features

AI Translation
  • 700 V @ TJ = 150°C
  • Typical RDS(on) = 82 mΩ
  • Ultra-low gate charge (typical Qg = 66 nC)
  • Low effective output capacitance (typical Coss(eff.) = 569 pF)
  • 100% avalanche tested
  • Lead-free and RoHS compliant

Applications

AI Translation
  • Telecom/Server Power Supplies - Industrial Power Supplies - EV Chargers - UPS/Solar