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EDA 모델EasyEDA
onsemi NRVBAF260T3G
| 제조업체 | |
| 제조사 품번 | NRVBAF260T3G |
| LCSC 번호 | C604274 |
| 포장 | SMA-FL |
| 고객 번호 | |
| 주요 제원 | DIODE SCHOTTKY 60V SMA-FL |
| 데이터시트 |  onsemi NRVBAF260T3G |
| RoHS 준수 | 4 개의 문서 사용 가능 |
| 대체 부품 | 20 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| 제조업체 | onsemi | |
| 포장 | SMA-FL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 630mV@2A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 60A | |
| Current - Rectified | 2A |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| 제조업체 | onsemi | |
| 포장 | SMA-FL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| 타입 | 설명 | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 630mV@2A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 60A | |
| Current - Rectified | 2A |
오류 신고유사 제품 보기 (0) >
개요
AI 번역
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
주요 특징
AI 번역
- Low Profile Package for Space Constrained Applications
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- 150℃ Operating Junction Temperature
- Guard-Ring for Stress Protection
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These are Pb-Free and Halide-Free Devices
재고 있음: 920
920 재고 있음, 당일 발송
최소값: 5배수: 5판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가 | 총액 |
|---|---|---|
| 5+ | $ 0.3259$ 0.1076 | $ 0.54 |
| 50+ | $ 0.2594$ 0.0856 | $ 4.28 |
| 150+ | $ 0.2308$ 0.0762 | $ 11.43 |
| 500+ | $ 0.1952$ 0.0645 | $ 32.25 |
| 2,500+ | $ 0.1794$ 0.0592 | $ 148.00 |
| 5,000+ | $ 0.1699$ 0.0561 | $ 280.50 |
표준 패키지5000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
$
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| 제조업체 | onsemi | |
| 포장 | SMA-FL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 630mV@2A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 60A | |
| Current - Rectified | 2A |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| 제조업체 | onsemi | |
| 포장 | SMA-FL | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ |
| 타입 | 설명 | |
|---|---|---|
| Voltage - DC Reverse (Vr) (Max) | 60V | |
| Voltage - Forward(Vf@If) | 630mV@2A | |
| Reverse Leakage Current (Ir) | 200uA@60V | |
| Non-Repetitive Peak Forward Surge Current | 60A | |
| Current - Rectified | 2A |
오류 신고유사 제품 보기 (0) >
개요
AI 번역
This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
주요 특징
AI 번역
- Low Profile Package for Space Constrained Applications
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- 150℃ Operating Junction Temperature
- Guard-Ring for Stress Protection
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These are Pb-Free and Halide-Free Devices
C604274 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
대체 부품
| MPN | 제조사 | 포장 | 재고 | 단가 | ||
|---|---|---|---|---|---|---|
| MBRAF260T3G | onsemi | SMA-FL | 4 | $ 0.7425 | ||
| VSS8D2M6-M3/I | VISHAY | DO-221AC(SMA) | 990 | $ 0.5417 | ||
| SM260AF | LRC | SMA-FL | 690 | $ 0.0784 | ||
| VSSAF3M10HM3/H | VISHAY | DO-221AC(SlimSMA) | 15 | $ 0.3208 | ||
| VSSAF56HM3_A/H | VISHAY | DO-221AC | 2,540 | $ 0.305 | ||
| VSSAF56-M3/6A | VISHAY | DO-221AC(SLIMSMA) | 302 | $ 0.8725 | ||
| VSSAF3M6-M3/H | VISHAY | DO-221AC(SLIMSMA) | 105 | $ 0.7283 | ||
| VSS8D3M10-M3/I | VISHAY | DO-221AC(SMA) | 0 | $ 0.2729 | ||
| VSSAF3M10-M3/H | VISHAY | DO-221AC(SLIMSMA) | 0 | $ 0.6531 | ||
| VSSAF3M10-M3/I | VISHAY | DO-221AC(SLIMSMA) | 0 | $ 0.2723 | ||
| VSSAF3M10HM3/I | VISHAY | DO-221AC(SLIMSMA) | 0 | $ 0.2614 | ||
| NRVBAF360T3G | onsemi | SMA-FL | 0 | $ 1.6032 | ||
| MBRAF360T3G | onsemi | SMA-FL | 0 | $ 5.4523 | ||
| VSSAF56-M3/6B | VISHAY | DO-221AC(SlimSMA) | 0 | $ 0.169 | ||
| VSSAF56HM3_A/I | VISHAY | DO-221AC(SlimSMA) | 0 | $ 0.1457 | ||
| VSSAF3M6-M3/I | VISHAY | DO-221AC | 0 | $ 0.2382 | ||
| VSSAF3M63-M3/H | VISHAY | DO-221AC(SLIMSMA) | 0 | $ 0.3641 | ||
| VSSAF3M63HM3/H | VISHAY | DO-221AC(SLIMSMA) | 0 | $ 0.4861 | ||
| VSSAF3M6HM3/H | VISHAY | DO-221AC(SLIMSMA) | 0 | $ 0.2697 | ||
| VSSAF3M6HM3/I | VISHAY | DO-221AC(SLIMSMA) | 0 | $ 0.3196 |