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Infineon FF150R12MS4G product image
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Infineon FF150R12MS4G

Manufacturer
Infineon
MPN
FF150R12MS4G
LCSC Part #
C540935
Packaging
-
Customer #
Key Attributes
1.25kW 150A 1.2kV IGBT Module IGBT Modules RoHS
DatasheetInfineon FF150R12MS4G
RoHS Compliance1 documents available
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QtyUnit Price(Reference Only)Total Amount
1+$ 140.3285$ 140.33
Standard Packaging10/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
Packaging-
Pd - Power Dissipation1.25kW
Td(off)-
Td(on)-
Current - Collector(Ic)150A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)500pF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)1.6uC@15V
Vce Saturation(VCE(sat))-
Reverse Recovery Time(trr)-
Switching Energy(Eoff)-
Turn-On Energy (Eon)-
Operating Temperature-40℃~+125℃
Input Capacitance(Cies)11nF
Output Capacitance(Coes)-
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