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Infineon IRFR15N20DTRPBF
| Manufacturer | |
| MPN | IRFR15N20DTRPBF |
| LCSC Part # | C537951 |
| Packaging | DPAK(TO-252AA) |
| Customer # | |
| Key Attributes | MOSFET N-CH 200V 17A DPAK(TO-252AA) |
| Datasheet | Infineon IRFR15N20DTRPBF |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 10 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 5.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 910pF | |
| Gate Charge(Qg) | 41nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 910pF | |
| Gate Charge(Qg) | 41nC |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, based on the Super Junction (SJ) principle. The latest CoolMOS™ P7 is an optimized platform specifically targeting cost-sensitive applications in the consumer market, such as chargers, adapters, lighting, and TVs. This new series combines all the advantages of fast-switching SJ MOSFETs with an excellent price-to-performance ratio and advanced ease of use. The technology meets the highest efficiency standards and supports high power density, enabling customers to achieve very slim designs.
Features
- Low gate-to-drain charge for reduced switching losses
- Fully characterized capacitances including effective COSS for simplified design
- Fully characterized avalanche voltage and current
Applications
- High frequency DC-DC converters Lead-Free
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.1387 | $ 1.14 |
| 10+ | $ 0.8963 | $ 8.96 |
| 30+ | $ 0.7743 | $ 23.23 |
| 100+ | $ 0.654 | $ 65.40 |
| 500+ | $ 0.5824 | $ 291.20 |
| 1,000+ | $ 0.545 | $ 545.00 |
Standard Packaging2000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 5.5V | |
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 910pF | |
| Gate Charge(Qg) | 41nC |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | DPAK(TO-252AA) | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 17A | |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 140W | |
| Reverse Transfer Capacitance (Crss@Vds) | 31pF | |
| RDS(on) | 165mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 910pF | |
| Gate Charge(Qg) | 41nC |
Introduction
CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, based on the Super Junction (SJ) principle. The latest CoolMOS™ P7 is an optimized platform specifically targeting cost-sensitive applications in the consumer market, such as chargers, adapters, lighting, and TVs. This new series combines all the advantages of fast-switching SJ MOSFETs with an excellent price-to-performance ratio and advanced ease of use. The technology meets the highest efficiency standards and supports high power density, enabling customers to achieve very slim designs.
Features
- Low gate-to-drain charge for reduced switching losses
- Fully characterized capacitances including effective COSS for simplified design
- Fully characterized avalanche voltage and current
Applications
- High frequency DC-DC converters Lead-Free
C537951 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| SP18N20TH | Siliup | TO-252-2L | 2,985 | $ 0.2547 | ||
| IRFR9N20DTRPBF-TP | TECH PUBLIC | TO-252-3L | 1,790 | $ 0.2062 | ||
| JCS640RH-O-R-N-A | Jilin Sino-Microelectronics | DPAK | 242 | $ 0.8221 | ||
| NCEP0218K | NCE | TO-252 | 1,810 | $ 0.6743 | ||
| RS65R190BD | REASUNOS | PTO-252 | 1,352 | $0.8955 $0.9426 | ||
| IRFR4620TRLPBF | Infineon | TO-252 | 445 | $ 1.1162 | ||
| AUIRFR4620TRL | Infineon | DPAK | 25 | $ 5.4539 | ||
| STD20NF20 | ST | TO-252(DPAK) | 69 | $ 2.1023 | ||
| IPD60R180CM8XTMA1 | Infineon | DPAK | 49 | $ 2.1142 | ||
| HSU18N20 | HUASHUO | TO-252-2 | 0 | $ 0.4318 |