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Slkor SMUN5211DW
| Manufacturer | SlkorAsian Brands |
| MPN | SMUN5211DW |
| LCSC Part # | C5375293 |
| Packaging | SOT-363 |
| Customer # | |
| Key Attributes | TRANS PREBIAS NPN 50V SOT-363 |
| Datasheet | Slkor SMUN5211DW |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Slkor | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 385mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Operating temperature | - | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Slkor | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 385mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Operating temperature | - | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Introduction
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5211DW, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- We declare that the material of product compliance with RoHS requirements.
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.116$ 0.0580 | $ 0.29 |
| 50+ | $ 0.0924$ 0.0462 | $ 2.31 |
| 150+ | $ 0.0806$ 0.0403 | $ 6.05 |
| 500+ | $ 0.0717$ 0.0359 | $ 17.95 |
| 3,000+ | $ 0.0647$ 0.0324 | $ 97.20 |
| 6,000+ | $ 0.0611$ 0.0306 | $ 183.60 |
Standard Packaging3000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Slkor | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA | |
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 385mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Operating temperature | - | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Manufacturer | Slkor | |
| Packaging | SOT-363 | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | - | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 35 | |
| Vce Saturation(VCE(sat)) | 250mV | |
| Current - Collector(Ic) | 100mA |
| Type | Description | |
|---|---|---|
| Output Voltage(VO(on)) | - | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 385mW | |
| Voltage - Input(Max)(VI(off)) | - | |
| Input Voltage (VI(on)@Ic,Vce) | - | |
| Operating temperature | - | |
| type | NPN | |
| Number | 2 NPN (Pre-Biased) |
Introduction
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN5211DW, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- We declare that the material of product compliance with RoHS requirements.
C5375293 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |