Infineon IPA60R060P7
| Fabricante | |
| Cód. da peça | IPA60R060P7 |
| Nº LCSC | C536340 |
| Emb. | TO-220-3 |
| Número do Cliente | |
| Atrib. princ. | 650V 30A 3.5V 29W 60mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS |
| Folha de Dados | Infineon IPA60R060P7 |
| Conformidade RoHS | 1 documentos disponíveis |
| Peças alternativas | 10 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 29W | |
| Reverse Transfer Capacitance (Crss@Vds) | 926pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.895nF | |
| Gate Charge(Qg) | 67nC@10V |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 29W | |
| Reverse Transfer Capacitance (Crss@Vds) | 926pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.895nF | |
| Gate Charge(Qg) | 67nC@10V |
Descrição
CoolMOS™ 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the advantages of fast-switching SJ MOSFETs with outstanding ease of use, such as extremely low ringing tendency, superior body diode ruggedness during hard commutation, and excellent ESD capability. Furthermore, the ultra-low switching and conduction losses enable switching applications to be more efficient, compact, and thermally optimized.
Recursos
- Suitable for hard-switching and soft-switching (PFC and LLC resonant circuits) due to excellent commutation ruggedness
- Significantly reduced switching and conduction losses
- Outstanding ESD ruggedness across all products, >2kV (HBM)
- Low RDS(on)A (<1Ωmm²) delivers superior RDS(on)/package ratio vs. competition
Aplicações
- Power Factor Correction (PFC) stages, hard-switching PWM stages, and resonant switching stages, e.g., for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS.
| Qtd. | Preço unit. | Valor total |
|---|---|---|
| 1+ | $ 5.6651 | $ 5.67 |
| 10+ | $ 5.553 | $ 55.53 |
| 30+ | $ 5.4799 | $ 164.40 |
| 100+ | $ 5.4052 | $ 540.52 |
Encapsulamento Padrão500/Full Tube | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Pd - Power Dissipation | 29W | |
| Reverse Transfer Capacitance (Crss@Vds) | 926pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.895nF | |
| Gate Charge(Qg) | 67nC@10V |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | Infineon | |
| Emb. | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | 29W | |
| Reverse Transfer Capacitance (Crss@Vds) | 926pF | |
| RDS(on) | 60mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.895nF | |
| Gate Charge(Qg) | 67nC@10V |
Descrição
CoolMOS™ 7th generation platform is a revolutionary technology for high-voltage power MOSFETs, designed based on the Super Junction (SJ) principle. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the advantages of fast-switching SJ MOSFETs with outstanding ease of use, such as extremely low ringing tendency, superior body diode ruggedness during hard commutation, and excellent ESD capability. Furthermore, the ultra-low switching and conduction losses enable switching applications to be more efficient, compact, and thermally optimized.
Recursos
- Suitable for hard-switching and soft-switching (PFC and LLC resonant circuits) due to excellent commutation ruggedness
- Significantly reduced switching and conduction losses
- Outstanding ESD ruggedness across all products, >2kV (HBM)
- Low RDS(on)A (<1Ωmm²) delivers superior RDS(on)/package ratio vs. competition
Aplicações
- Power Factor Correction (PFC) stages, hard-switching PWM stages, and resonant switching stages, e.g., for PC power supplies, adapters, LCD and plasma TVs, lighting, servers, telecom, and UPS.
C536340 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Peças alternativas
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