Infineon IKW60N60H3

Manufacturer	Infineon
MPN	IKW60N60H3
LCSC Part #	C536221
Packaging	TO-247-3
Customer #
Key Attributes	416W 80A 600V FS (Field Stop) TO-247-3 Single IGBTs RoHS
Datasheet	Infineon IKW60N60H3
RoHS Compliance	1 documents available
Alternative Parts	10

Products Specifications

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Type	Description
Category	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturer	Infineon
Packaging	TO-247-3
Pd - Power Dissipation	416W
Td(off)	252ns
Td(on)	27ns
Current - Collector(Ic)	80A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.1V@1mA
Operating Temperature	-40℃~+175℃
Vce Saturation(VCE(sat))	2.3V@60A,15V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	143ns
Switching Energy(Eoff)	1.13mJ
Turn-On Energy (Eon)	2.1mJ
Input Capacitance(Cies)	3.68nF
Output Capacitance(Coes)	160pF
Gate Charge(Qg)	375nC@15V

Type	Description
Category	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturer	Infineon
Packaging	TO-247-3
Pd - Power Dissipation	416W
Td(off)	252ns
Td(on)	27ns
Current - Collector(Ic)	80A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	FS (Field Stop)

Type	Description
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.1V@1mA
Operating Temperature	-40℃~+175℃
Vce Saturation(VCE(sat))	2.3V@60A,15V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	143ns
Switching Energy(Eoff)	1.13mJ
Turn-On Energy (Eon)	2.1mJ
Input Capacitance(Cies)	3.68nF
Output Capacitance(Coes)	160pF
Gate Charge(Qg)	375nC@15V

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Qty	Unit Price	Total Amount
1+	$ 9.8509	$ 9.85
10+	$ 9.6969	$ 96.97
30+	$ 9.5953	$ 287.86
100+	$ 9.492	$ 949.20
Standard Packaging240/Full Tube

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All

Type	Description
Category	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturer	Infineon
Packaging	TO-247-3
Pd - Power Dissipation	416W
Td(off)	252ns
Td(on)	27ns
Current - Collector(Ic)	80A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.1V@1mA
Operating Temperature	-40℃~+175℃
Vce Saturation(VCE(sat))	2.3V@60A,15V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	143ns
Switching Energy(Eoff)	1.13mJ
Turn-On Energy (Eon)	2.1mJ
Input Capacitance(Cies)	3.68nF
Output Capacitance(Coes)	160pF
Gate Charge(Qg)	375nC@15V

Type	Description
Category	Discrete Semiconductors/Transistors/IGBTs/Single IGBTs
Manufacturer	Infineon
Packaging	TO-247-3
Pd - Power Dissipation	416W
Td(off)	252ns
Td(on)	27ns
Current - Collector(Ic)	80A
Collector-Emitter Breakdown Voltage (Vces)	600V
Reverse Transfer Capacitance (Cres)	100pF
IGBT Type	FS (Field Stop)

Type	Description
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	4.1V@1mA
Operating Temperature	-40℃~+175℃
Vce Saturation(VCE(sat))	2.3V@60A,15V
Collector Cut-Off Current (Ices)	-
Reverse Recovery Time(trr)	143ns
Switching Energy(Eoff)	1.13mJ
Turn-On Energy (Eon)	2.1mJ
Input Capacitance(Cies)	3.68nF
Output Capacitance(Coes)	160pF
Gate Charge(Qg)	375nC@15V

MPN	Manufacturer	Packaging	Availability	Unit Price
IGW60N60H3	Infineon	TO-247-3	8	$ 7.0038
YGW60N65T1	luxin-semi	TO-247	3	$ 3.4661
IRG7PH46UD-EP-HXY	HXY MOSFET	TO-247	43	$ 3.0795
IKW40N120CS6-HXY	HXY MOSFET	TO-247	30	$ 3.1089
IKW40N120H3-HXY	HXY MOSFET	TO-247	23	$ 3.3474
NGTB40N120FL2WG-HXY	HXY MOSFET	TO-247	20	$ 4.0211
DGTD120T40S1PT-HXY	HXY MOSFET	TO-247	13	$ 4.2142
IKW40N120CH7XKSA1-HXY	HXY MOSFET	TO-247	4	$ 5.4041
MBQ40T120QESTH-HXY	HXY MOSFET	TO-247	3	$ 3.5173
FGY40T120SMD	onsemi	TO-247-3	0	$ 20.0544