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Infineon DF200R12W1H3_B27 product image
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Infineon DF200R12W1H3_B27

Manufacturer
Infineon
MPN
DF200R12W1H3_B27
LCSC Part #
C535090
Packaging
-
Customer #
Key Attributes
375W 30A 1.2kV IGBT Module IGBT Modules RoHS
DatasheetInfineon DF200R12W1H3_B27
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
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QtyUnit Price(Reference Only)Total Amount
1+$ 68.6969$ 68.70
192+$ 26.5855$ 5104.42
504+$ 25.6505$ 12927.85
1,008+$ 25.1899$ 25391.42
Standard Packaging24/Full Tray
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/IGBTs/IGBT Modules
ManufacturerInfineon
Packaging-
Pd - Power Dissipation375W
Td(off)-
Td(on)30ns
Current - Collector(Ic)30A
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Reverse Transfer Capacitance (Cres)64pF
IGBT TypeIGBT Module
Gate-Emitter Threshold Voltage (Vge(th)@Ic)-
Gate Charge(Qg)-
Vce Saturation(VCE(sat))1.35V
Reverse Recovery Time(trr)-
Switching Energy(Eoff)-
Turn-On Energy (Eon)-
Operating Temperature-40℃~+150℃
Input Capacitance(Cies)2nF
Output Capacitance(Coes)-
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