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Modèles EDAEasyEDA
Infineon BSP317P H6327
| Fabricant | |
| Réf. Fab. | BSP317P H6327 |
| Réf. LCSC | C534568 |
| Condit. | SOT-223 |
| Numéro Client | |
| Caract. clés | MOSFET P-CH 250V 0.43A SOT-223 |
| Fiche Technique | Infineon BSP317P H6327 |
| Conformité RoHS | 1 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | SOT-223 | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 1.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 430mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16.7pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 262pF | |
| Gate Charge(Qg) | 15.1nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | SOT-223 | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 1.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 430mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16.7pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 262pF | |
| Gate Charge(Qg) | 15.1nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- P-Channel
- Enhancement mode
- Logic Level
- dv/dt rated
- Pb-free lead plating; RoHS compliant
- Qualified according to AEC Q101
- Halogen-free according to IEC61249-2-21
En stock: 1,045
1,045 En stock, expédition immédiate
Minimum: 1Multiple: 1Unité de vente: Piece
Ajouter à la Liste BOM
| Qté | Prix unit. | Montant total |
|---|---|---|
| 1+ | $ 0.6982 | $ 0.70 |
| 10+ | $ 0.5687 | $ 5.69 |
| 30+ | $ 0.5032 | $ 15.10 |
| 100+ | $ 0.4393 | $ 43.93 |
| 500+ | $ 0.4016 | $ 200.80 |
| 1,000+ | $ 0.3819 | $ 381.90 |
Boîtier Standard1000/Full Reel | ||
Meilleur prix pour une plus grande quantité ?
$
Spécifications du Produit
Tout
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | SOT-223 | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 1.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 430mA | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16.7pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 262pF | |
| Gate Charge(Qg) | 15.1nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | Infineon | |
| Condit. | SOT-223 | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 1.8W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Current - Continuous Drain(Id) | 430mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Reverse Transfer Capacitance (Crss@Vds) | 16.7pF | |
| RDS(on) | 3Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 262pF | |
| Gate Charge(Qg) | 15.1nC@10V | |
| Vgs | ±20V | |
| Type | P-Channel |
Aide & CommentairesAfficher les produits similaires (0) >
Caractéristiques
Traduction par IA
- P-Channel
- Enhancement mode
- Logic Level
- dv/dt rated
- Pb-free lead plating; RoHS compliant
- Qualified according to AEC Q101
- Halogen-free according to IEC61249-2-21
C534568 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| BSP317P | TECH PUBLIC | SOT-223 | 2,023 | $0.3988 $0.4197 | ||
| TPM2505PY3 | TECH PUBLIC | SOT-223 | 169 | $0.3908 $0.4113 | ||
| TPFQT2P25TF | TECH PUBLIC | SOT-223 | 30 | $0.3367 $0.3544 | ||
| BSP225-VB | VBsemi Elec | SOT-223 | 36 | $1.1857 $1.2481 | ||
| ZVP4525GTA-VB | VBsemi Elec | SOT-223 | 6 | $1.1192 $1.1781 | ||
| HSL2P25 | HUASHUO | SOT-223 | 3,020 | $ 0.3377 | ||
| ZVP4424GTA | DIODES | SOT-223-4 | 1 | $ 1.1925 | ||
| BSP317PL6327 | Infineon | SOT-223-4 | 0 | $ 0.3864 | ||
| VBJ2251K | VBsemi Elec | SOT-223 | 0 | $ 0.9024 | ||
| BSP225,115-VB | VBsemi Elec | SOT-223 | 0 | $1.0080 $1.061 |