LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
Infineon 6EDL04N06PT product image
  • 6EDL04N06PT thumbnail 1
  • 6EDL04N06PT thumbnail 2
  • 6EDL04N06PT thumbnail 3
  • Pinout
  • Footprint
Images for reference only

Infineon 6EDL04N06PT

Manufacturer
Infineon
MPN
6EDL04N06PT
LCSC Part #
C533115
Packaging
DSO-28
Customer #
Key Attributes
200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)
DatasheetInfineon 6EDL04N06PT
RoHS Compliance1 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
ManufacturerInfineon
PackagingDSO-28
Input Logic Level - Low700mV~1.1V
Low Level Delay Time530ns
High Level Delay Time530ns
Quiescent Current1.5mA
Input Logic Level - High1.7V~2.4V
Voltage - Supply10V~17.5V
Operating Temperature-40℃~+105℃
Driven ConfigurationThree Phase
Current - Output Low(IOL)375mA
Rise Time60ns
Fall Time26ns
FeaturesEnable shutdown;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)165mA
Load TypeMOSFET
Help & FeedbackShow similar products (0) >

Introduction

AI Translation

The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions. The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to 3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an overcurrent detection. The over-current level is adjusted by choosing the resistor value and the threshold level at pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down off all six switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-current can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 μA. Therefore, the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and 375 mA for pull down. Because of system safety reasons a 310 ns interlocking time has been realised. The function of input EN can optionally be extended with over-temperature detection, using an external NTC resistor. The monolithic integrated bootstrap diode structures between pins VCC and VBx can be used for power supply of the high side.

Features

AI Translation
  • Infineon thin-film-SOI-technology Maximum blocking voltage +600 V
  • Output source/sink current +0.165 A/-0.375 A
  • Integrated ultra-fast, low RDS(0N) Bootstrap Diode
  • Insensitivity of the bridge output to negative transient voltages up to -50 V given by SOI technology
  • Separate control circuits for all six drivers
  • Detection of over current and under voltage supply
  • Externally programmable delay for fault clear after over current detection
  • 'Shut down' of all switches during error conditions
  • CMOS and LSTTL compatible input (negative logic)
  • Signal interlocking of every phase to prevent cross conduction

Applications

AI Translation
  • Home appliance, refrigeration compressors, air-conditioning
  • Fans, pumps
  • Motor drives, general purpose inverters
  • Power tools, light electric vehicles