LCSC Electronics logoLCSC Electronics svg logo
Sign In
USD
R+O HE10N082SG product image
  • HE10N082SG thumbnail 1
  • HE10N082SG thumbnail 2
  • HE10N082SG thumbnail 3
  • Pinout
  • Footprint
Images for reference only

R+O HE10N082SG

Manufacturer
R+OAsian Brands
MPN
HE10N082SG
LCSC Part #
C52766428
Packaging
TO-220CB
Customer #
Key Attributes
125W 100V 110A 6.5mΩ@10V 1 N-channel N-Channel TO-220CB Single FETs, MOSFETs
DatasheetR+O HE10N082SG
Alternative Parts3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerR+O
PackagingTO-220CB
Output Capacitance(Coss)729pF
Ciss-Input Capacitance2.312nF
Pd - Power Dissipation125W
ConfigurationStandalone
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)110A
Reverse Transfer Capacitance (Crss)25.6pF
RDS(on)6.5mΩ@10V
Number1 N-channel
Gate Charge(Qg)40nC@10V
Vgs±20V
Gate Threshold Voltage (Vgs(th))1.7V
TypeN-Channel
Help & FeedbackShow similar products (0) >

Features

AI Translation
  • Drain-Source Voltage (VDS) = 100 V
  • Drain Current (ID) = 110 A
  • RDS(on) < 8.2 mΩ at VGS = 10 V
  • RDS(on) < 10 mΩ at VGS = 4.5 V
  • Fast switching
  • Low gate charge and on-resistance
  • Advanced split-gate trench technology

Applications

AI Translation
  • Power switching applications
  • Battery management
  • Uninterruptible power supplies