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ST STGW60H65DFB-4
| Manufacturer | |
| MPN | STGW60H65DFB-4 |
| LCSC Part # | C5268577 |
| Packaging | TO-247-4 |
| Customer # | |
| Key Attributes | Trench gate field-stop 650 V, 60 A high speed HB series IGBT |
| Datasheet | ST STGW60H65DFB-4 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247-4 | |
| Pd - Power Dissipation | 375W | |
| Td(off) | 281ns | |
| Td(on) | 65ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 158nF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@60A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 60ns | |
| Switching Energy(Eoff) | 1.161mJ | |
| Turn-On Energy (Eon) | 346uJ | |
| Input Capacitance(Cies) | 7.792uF | |
| Gate Charge(Qg) | 306nC@15V | |
| Output Capacitance(Coes) | 262nF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247-4 | |
| Pd - Power Dissipation | 375W | |
| Td(off) | 281ns | |
| Td(on) | 65ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 158nF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@60A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 60ns | |
| Switching Energy(Eoff) | 1.161mJ | |
| Turn-On Energy (Eon) | 346uJ | |
| Input Capacitance(Cies) | 7.792uF | |
| Gate Charge(Qg) | 306nC@15V | |
| Output Capacitance(Coes) | 262nF |
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Introduction
AI Translation
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
AI Translation
- Maximum junction temperature: 175℃
- Dedicated drive Kelvin pin for excellent switching performance
- Low V<sub>CE(sat)</sub>: typical 1.6V @ I<sub>C</sub> = 60A
- Minimized tail current
- Tight parameter distribution
- Safe parallel operation
- Low thermal resistance
- Very fast soft-recovery anti-parallel diode
Applications
AI Translation
- Photovoltaic inverters
- High-frequency converters
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Minimum: 1Multiple: 1Sales Unit: Piece
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 7.839 | $ 7.84 |
| 10+ | $ 7.6589 | $ 76.59 |
| 30+ | $ 6.7291 | $ 201.87 |
| 90+ | $ 6.609 | $ 594.81 |
Standard Packaging30/Full Tube | ||
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247-4 | |
| Pd - Power Dissipation | 375W | |
| Td(off) | 281ns | |
| Td(on) | 65ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 158nF | |
| IGBT Type | FS (Field Stop) | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@60A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 60ns | |
| Switching Energy(Eoff) | 1.161mJ | |
| Turn-On Energy (Eon) | 346uJ | |
| Input Capacitance(Cies) | 7.792uF | |
| Gate Charge(Qg) | 306nC@15V | |
| Output Capacitance(Coes) | 262nF |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Manufacturer | ST | |
| Packaging | TO-247-4 | |
| Pd - Power Dissipation | 375W | |
| Td(off) | 281ns | |
| Td(on) | 65ns | |
| Current - Collector(Ic) | 60A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 158nF | |
| IGBT Type | FS (Field Stop) |
| Type | Description | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5V@1mA | |
| Operating Temperature | -55℃~+175℃ | |
| Vce Saturation(VCE(sat)) | 2V@60A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 60ns | |
| Switching Energy(Eoff) | 1.161mJ | |
| Turn-On Energy (Eon) | 346uJ | |
| Input Capacitance(Cies) | 7.792uF | |
| Gate Charge(Qg) | 306nC@15V | |
| Output Capacitance(Coes) | 262nF |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Features
AI Translation
- Maximum junction temperature: 175℃
- Dedicated drive Kelvin pin for excellent switching performance
- Low V<sub>CE(sat)</sub>: typical 1.6V @ I<sub>C</sub> = 60A
- Minimized tail current
- Tight parameter distribution
- Safe parallel operation
- Low thermal resistance
- Very fast soft-recovery anti-parallel diode
Applications
AI Translation
- Photovoltaic inverters
- High-frequency converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Type | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IKY40N120CS6 | Infineon | TO-247-4 | 5 | $ 10.1491 | ||
| IKY75N120CS6XKSA1 | Infineon | TO-247-4 | 32 | $ 13.6857 | ||
| FGH75T65SHDTL4 | onsemi | TO-247-4LD | 726 | $ 2.8549 | ||
| IKZA75N65SS5XKSA1 | Infineon | TO-247-4 | 6 | $ 20.6929 | ||
| MSG75T65HFC6 | MASPOWER | TO-247-4L | 90 | $ 5.4986 | ||
| STGW80H65DFB-4 | ST | TO-247-4 | 0 | $ 5.0023 | ||
| STGW100H65FB2-4 | ST | TO-247-4 | 0 | $ 14.5794 | ||
| FGH75T65SQDTL4 | onsemi | TO-247-4 | 0 | $ 8.4286 | ||
| FGY4L140T120SWD | onsemi | TO-247-4L | 0 | $ 21.4467 | ||
| FGHL75T65MQDTL4 | onsemi | TO-247-4LD | 0 | $ 8.3636 |