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STANSON Tech. STN4900
| Manufacturer | STANSON Tech.Asian Brands |
| MPN | STN4900 |
| LCSC Part # | C5253045 |
| Packaging | SOP-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 5.3A SOP-8 |
| Datasheet | STANSON Tech. STN4900 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | STANSON Tech. | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 5.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 110mΩ@10V;115mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 675pF | |
| Gate Charge(Qg) | 20nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | STANSON Tech. | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 5.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 110mΩ@10V;115mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 675pF | |
| Gate Charge(Qg) | 20nC@5V | |
| Type | N-Channel |
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Introduction
AI Translation
The STN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
Features
AI Translation
- 60V/5.3A, RDS(ON)=118mΩ QVGS=10V
- 60V/4.7A, RDS(ON)=115mΩ VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design
Applications
AI Translation
- Low-voltage applications
- Laptop power management
- Battery-powered circuits requiring high-side switching
In-Stock: 2,490
2,490 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1162 | $ 0.58 |
| 50+ | $ 0.1021 | $ 5.11 |
| 150+ | $ 0.0961 | $ 14.42 |
| 500+ | $ 0.0886 | $ 44.30 |
| 2,500+ | $ 0.0852 | $ 213.00 |
| 5,000+ | $ 0.0832 | $ 416.00 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | STANSON Tech. | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 5.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 110mΩ@10V;115mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 675pF | |
| Gate Charge(Qg) | 20nC@5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | STANSON Tech. | |
| Packaging | SOP-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 80pF | |
| Current - Continuous Drain(Id) | 5.3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 110mΩ@10V;115mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 675pF | |
| Gate Charge(Qg) | 20nC@5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The STN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
Features
AI Translation
- 60V/5.3A, RDS(ON)=118mΩ QVGS=10V
- 60V/4.7A, RDS(ON)=115mΩ VGS=4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- SOP-8 package design
Applications
AI Translation
- Low-voltage applications
- Laptop power management
- Battery-powered circuits requiring high-side switching
C5253045 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |