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HUASHUO HSS6107
| Manufacturer | HUASHUOAsian Brands |
| MPN | HSS6107 |
| LCSC Part # | C508450 |
| Packaging | SOT-23L |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 1.7A SOT-23L |
| Datasheet | HUASHUO HSS6107 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 6 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 180mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 531pF | |
| Gate Charge(Qg) | 4.6nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 180mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 531pF | |
| Gate Charge(Qg) | 4.6nC@4.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSS6107 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSS6107 complies with RoHS and green product requirements and has passed full-function reliability qualification.
Features
AI Translation
- 100% guaranteed avalanche capability (EAS)
- Green & eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
In-Stock: 15,215
15,215 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1072 | $ 0.54 |
| 50+ | $ 0.0886 | $ 4.43 |
| 150+ | $ 0.0793 | $ 11.90 |
| 500+ | $ 0.0723 | $ 36.15 |
| 3,000+ | $ 0.0599 | $ 179.70 |
| 6,000+ | $ 0.0571 | $ 342.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 180mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 531pF | |
| Gate Charge(Qg) | 4.6nC@4.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HUASHUO | |
| Packaging | SOT-23L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 1.7A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 180mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 531pF | |
| Gate Charge(Qg) | 4.6nC@4.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
HSS6107 is a high cell density trench P-channel MOSFET that delivers excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. HSS6107 complies with RoHS and green product requirements and has passed full-function reliability qualification.
Features
AI Translation
- 100% guaranteed avalanche capability (EAS)
- Green & eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
C508450 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |